STMicroelectronics STGAP2GS GaN driver

STMicroelectronics has launched the STGAP2GS, a galvanically isolated gate driver for gallium-nitride (GaN) transistors. The gate driver trims dimensions and bill-of-materials costs in applications that require wide-bandgap efficiency with robust safety and electrical protection.

The single-channel driver can be connected to a high-voltage rail up to 1200 V, or 1700 V with the STGAP2GSN narrow-body version, and provides gate-driving voltage up to 15 V. Capable of sinking and sourcing up to 3 A gate current to the connected GaN transistor, the driver provides controlled switching transitions up to high operating frequencies.

With minimal propagation delay across the isolation barrier, at just 45 ns, the gate driver is designed to provide a fast dynamic response. In addition, the driver’s dV/dt transient immunity of ±100 V/ns over the full temperature range guards against unwanted transistor gate change. The driver is available with separate sink and source pins for easy tuning of the gate-driving operation and performance.

The driver also eases the adoption of GaN technology in various consumer and industrial applications. These include power supplies in computer servers, factory-automation equipment, motor drivers, solar and wind power systems, home appliances, domestic fans and wireless chargers. In addition to integrating galvanic isolation, the driver also features built-in system protection including thermal shutdown and undervoltage lockout (UVLO) optimised for GaN technology.

The STGAP2GS in SO-8 widebody package, and the STGAP2GSN SO-8 narrow version, are available now.