STMicroelectronics STPOWER IH2 insulated-gate bipolar transistors

STMicroelectronics has released a series of insulated-gate bipolar transistors (IGBTs) with an increased breakdown-voltage capability of 1350 V and maximum operating temperature of 175°C. The higher ratings provide greater design margin and robust performance under all operating conditions.

The new IGBTs also permit increased power-conversion efficiency. Favourable parameters include low saturation voltage, V_ce(sat), which enables low dissipation when the device is turned on. The freewheeling diode has low voltage drop and optimised turn-off energy that increases the efficiency of single-switch quasi-resonant converters operating at frequencies from 16 to 60 kHz.

Due to their ruggedness, the IGBTs are suitable for induction-heating applications including domestic appliances such as kitchen hobs, inverter microwave ovens and rice cookers. In addition, the V_ce(sat) has a positive temperature coefficient and tight parameter distribution between devices, to help simplify design and ease connecting multiple IGBTs in parallel to address high-power applications.

The first two devices in the series, the 25A STGWA25IH135DF2 and 35A STGWA35IH135DF2, are in production now and available in a standard TO-247 long-lead power package.