Toshiba 100V N-Channel Power MOSFET

Toshiba has launched TPH3R10AQM, a 100V N-channel power MOSFET fabricated with Toshiba’s latest-generation process, U-MOS X-H. The product targets applications such as switching circuits and hot swap circuits on the power lines of industrial equipment used for data centres and communications base stations.

The MOSFET features 3.1mΩ maximum drain-source On-resistance and has also expanded its safe operating area, making it suitable for linear mode operation. Reducing the On-resistance and expanding the linear operating range in the safe operating area reduce the number of parallel connections. Furthermore, its gate threshold voltage range of 2.5 to 3.5 V makes it less likely to malfunction due to gate voltage noise. The new product uses the footprint compatible SOP Advance(N) package. The MOSFET also features a high channel temperature rating, reaching a maximum of 175°C.