Vishay 2N6660JANTX/JANTXV and 2N6661JANTX/JANTXV MOSFETs

Vishay has introduced the first of its new Siliconix military-grade n-channel power MOSFETs - the JAN-qualified 60 V 2N6660JANTX/JANTXV and the 90 V 2N6661JANTX/JANTXV.

For military, space and avionics applications, the devices combine low on-resistance and fast switching speeds in the sealed TO-205AD (TO-39) package.

The devices are optimised for TTL/CMOS direct logic level interfaces; drivers for relays, solenoids, lamps, hammers, displays, memories and transistors; battery-operated systems; and solid-state relays.

The MOSFETs’ sealed TO-205AD package is designed to withstand the higher temperatures of military and aerospace applications.

The 60 V device offers low on-resistance of 1.3 Ω typical at 10 V, a low gate-source threshold voltage of 1.7 V and fast switching speeds of 8 ns.

The 90 V device provides low on-resistance of 3.6 Ω typical at 10 V, a low gate-source threshold voltage of 1.6 V and fast switching speeds of 6 ns. Both devices feature low input and output leakage and provide low input capacitance of 35 pF typical.