Enhanced BiFET process for GaAs-based products

Skyworks Solutions, an american analog semiconductor producer, is leveraging a new bipolar field effect transistor (BiFET) process technology for its gallium arsenide (GaAs)-based products.

This will enable it to further differentiate its portfolio when developing solutions for handset manufacturers.

BiFET integrates indium gallium phosphide (InGaP)-based heterojunction bipolar transistors (HBTs) with field effect transistors (FETs) on the same GaAs substrate.

The addition of FETs to an InGaP/GaAs HBT process allows advanced bias control features to be embedded in the same power amplifier (PA) die, thereby eliminating the need for external bias control circuits for many applications. When coupled with other proprietary technology that extends battery life and reduces the radio frequency loss between integrated components, Skyworks is able to increase functionality and simplify designs across a suite of GaAs-based solutions, and address additional markets that require embedded analog signal processing and control functionality.

"With the development of our BiFET process technology, Skyworks is delivering performance advantages in GaAs that support high-volume wireless applications," said Steven C. Machuga, vice president of RF front-end development for Skyworks' Mobile Platforms' business.

"At a higher level, BiFET represents yet another breakthrough technology developed by Skyworks, enabling higher levels of device integration and allowing our customers' to differentiate their platforms through considerable reductions in both time-to-market and cost."

Item provided courtesy of RF Global Net