The SiC revolution — reliable, efficient and cost-effective

Supplied by Semikron on Friday, 12 August, 2022

Explore the switching behaviours of silicon carbide (SiC) Schottky barrier diodes (SBD) and how they differ from MOSFET pn body diodes. Learn how SiC-based devices can reach higher voltages, and lower conduction and switching losses.

Discover how to deliver the high efficiency and reliability needed to produce the revolutionary energy smart devices of the future.

Related White Papers

How to build a smarter ultra-wide DC-DC converter

Learn how to design an ultra-wide DC-DC converter using multiple parts and maximise your...

SiC in power electronics

The total market of SiC power devices is predicted to rise to more than US$1 billion by...

Sustainability for manufacturers: driving profitability and growth

This white paper encourages manufacturers to integrate sustainability into their corporate...

  • All content Copyright © 2022 Westwick-Farrow Pty Ltd