The SiC revolution — reliable, efficient and cost-effective
Supplied by Semikron on Friday, 12 August, 2022
Explore the switching behaviours of silicon carbide (SiC) Schottky barrier diodes (SBD) and how they differ from MOSFET pn body diodes. Learn how SiC-based devices can reach higher voltages, and lower conduction and switching losses.
Discover how to deliver the high efficiency and reliability needed to produce the revolutionary energy smart devices of the future.
Related White Papers
Eliminate intermediate energy storage in EV power architectures
Learn about the BCM converter’s function, operation and capabilities as compared to a...
How to cut your wireless and EMI/EMC compliance costs
Failing verification or qualification of wireless technologies within a new...
Advanced cooling for small form factor electronics
As processors become more powerful, system power consumption increases along with the...
