The SiC revolution — reliable, efficient and cost-effective

Supplied by Semikron on Friday, 12 August, 2022

Explore the switching behaviours of silicon carbide (SiC) Schottky barrier diodes (SBD) and how they differ from MOSFET pn body diodes. Learn how SiC-based devices can reach higher voltages, and lower conduction and switching losses.

Discover how to deliver the high efficiency and reliability needed to produce the revolutionary energy smart devices of the future.

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12 Pages PDF

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