The SiC revolution — reliable, efficient and cost-effective
Supplied by Semikron on Friday, 12 August, 2022
Explore the switching behaviours of silicon carbide (SiC) Schottky barrier diodes (SBD) and how they differ from MOSFET pn body diodes. Learn how SiC-based devices can reach higher voltages, and lower conduction and switching losses.
Discover how to deliver the high efficiency and reliability needed to produce the revolutionary energy smart devices of the future.
Related White Papers
Power system design survey — the results are in!
This online research project surveyed engineers in power design around the world in order to...
SiC in power electronics
The total market of SiC power devices is predicted to rise to more than US$1 billion by...
How to quickly achieve innovative breakthrough applications
Learn about advanced pre-made industrial apps that reshape the AIoT world for industrial...
