The SiC revolution — reliable, efficient and cost-effective
Supplied by Semikron on Friday, 12 August, 2022
Explore the switching behaviours of silicon carbide (SiC) Schottky barrier diodes (SBD) and how they differ from MOSFET pn body diodes. Learn how SiC-based devices can reach higher voltages, and lower conduction and switching losses.
Discover how to deliver the high efficiency and reliability needed to produce the revolutionary energy smart devices of the future.
Related White Papers
Key design tips for high-performance environmental monitoring
Equipment and sensors built for environmental monitoring contend with a myriad of...
How to design rapid-start power applications that never fail
Learn how to design an isolated power system that can start up within 10 ms of application of...
Solar technology — tools, tips and tricks of the trade
Photovoltaic systems require specific knowledge and specialist products. Download this...
