The SiC revolution — reliable, efficient and cost-effective
Supplied by Semikron on Friday, 12 August, 2022
Explore the switching behaviours of silicon carbide (SiC) Schottky barrier diodes (SBD) and how they differ from MOSFET pn body diodes. Learn how SiC-based devices can reach higher voltages, and lower conduction and switching losses.
Discover how to deliver the high efficiency and reliability needed to produce the revolutionary energy smart devices of the future.
Related White Papers
Your guide to high performance power module packaging
Examine the key attributes of power module packaging. Learn how to deliver your...
Advanced bidirectional DC-DC converter maximises your power
Learn how to reach a higher power level and solve your voltage spike issues.
7 ways to shrink your power system
A common challenge in the creation of an electronic power system is developing a power chain...
