The SiC revolution — reliable, efficient and cost-effective

Supplied by Semikron on Friday, 12 August, 2022


Explore the switching behaviours of silicon carbide (SiC) Schottky barrier diodes (SBD) and how they differ from MOSFET pn body diodes. Learn how SiC-based devices can reach higher voltages, and lower conduction and switching losses.

Discover how to deliver the high efficiency and reliability needed to produce the revolutionary energy smart devices of the future.


Related White Papers

How 3D printable electronics can cut your costs

3D printing is opening the door to new levels of efficiency and innovation in prototypes,...

Enabling Mechatronics Product Development with Digital Prototyping

This white paper features information on how Digital Prototyping enables manufacturers to...

Build high-performance power systems quickly and easily

A new line of AC-DC front-end components allows the Power Component Design Methodology to be...


  • All content Copyright © 2025 Westwick-Farrow Pty Ltd