The SiC revolution — reliable, efficient and cost-effective
Supplied by Semikron on Friday, 12 August, 2022
Explore the switching behaviours of silicon carbide (SiC) Schottky barrier diodes (SBD) and how they differ from MOSFET pn body diodes. Learn how SiC-based devices can reach higher voltages, and lower conduction and switching losses.
Discover how to deliver the high efficiency and reliability needed to produce the revolutionary energy smart devices of the future.
Related White Papers
How 3D printable electronics can cut your costs
3D printing is opening the door to new levels of efficiency and innovation in prototypes,...
How wireless technology enables next-gen audio designs
The demand for high-fidelity audio continues to drive sound engineers for 32-bit audio...
New generation LCD resizing technology
Large-sized LCD displays have limitations – poor aspect ratio, high power consumption...
