Intel Optane persistent memory
07 August, 2020Intel Optane persistent memory provides an alternative to DRAM with capacity of up to 512 GB. The product offers high performance and efficiency, helping to support applications such as in-memory databases, analytics and content delivery networks.
Smart molecules could enable computers with bigger memories
10 June, 2020Researchers have discovered a single-molecule 'switch', around 5 nm2 in size, that can act like a transistor and offers the potential to store binary information.
Spin waves could stop devices from overheating
06 December, 2019Researchers have found a way of using 'spin waves' to switch magnetisation at room temperature for more energy-efficient spin memory and logic devices.
Energy-efficient memory device inspired by Li-ion batteries
04 December, 2019Scientists have developed a three-valued memory device with extremely low energy consumption that may be key for the development of more energy-efficient and faster RAMs.
Universal computer memory could replace DRAM
10 July, 2019The inventors of the device used quantum mechanics to solve the dilemma of choosing between stable, long-term data storage and low-energy writing and erasing.
Magnetic switching component suitable for spintronics
27 June, 2019Researchers have created an electronic component that demonstrates functions and abilities important to future generations of computational logic and memory devices.
Ferrimagnetic materials make spintronic memory more stable
17 December, 2018A new magnetic memory device is able to manipulate digital information 20 times more efficiently and with 10 times more stability than commercial spintronic digital memories.
Thanks for the memristors
25 January, 2018US scientists have unveiled the inner workings of memristors, which can vary their electrical resistance based on the memory of past activity.
Advantech SQRAM DDR4 2666 server memory
01 January, 2018Advantech's SQRAM-DDR4-2666 server memory delivers high performance and is fully compatible with Intel Xeon scalable platforms.
Ultrafast magnetic reversal for high-performance, low-power memory
20 November, 2017US researchers have developed an ultrafast method for electrically controlling magnetism in certain metals. Their breakthrough could lead to increased performance and more energy-efficient computer memory and processing technologies.
Inkjet-printable electronics on the way
11 April, 2017Researchers from Germany and Canada are paving the way for mass-producing printable electronics by demonstrating a fully inkjet-printable flexible resistive memory.
Ultrafast memories for flexible electronics
04 April, 2017Engineering experts have developed what they claim are the quickest, smallest, highest-capacity memories for flexible and transparent applications, using a hybrid of graphene oxide and titanium oxide.
Alliance Memory AS4C1G8MD3L CMOS DDR3L SDRAM memory device
07 February, 2017The Alliance Memory monolithic high-speed, low-voltage AS4C1G8MD3L CMOS DDR3L SDRAM memory device has an 8 Gb density in the 78-ball, 9 x 13.2 mm lead-free FBGA package.
Fujitsu Semiconductor 4 Mb ReRAM MB85AS4MT memory
31 October, 2016The Fujitsu Semiconductor 4 Mb ReRAM MB85AS4MT memory operates with a wide range of power supply voltage, from 1.65 to 3.6 V. It features a small average current in read operations of 0.2 mA at a maximum operating frequency of 5 MHz.
XJTAG XJFlash in-system programming technology
14 October, 2016XJTAG XJFlash in-system programming technology provides users with fast programming when configuring memory attached to the processor subsystems of the FPGA SoCs.
