Inkjet-printable electronics on the way
11 April, 2017Researchers from Germany and Canada are paving the way for mass-producing printable electronics by demonstrating a fully inkjet-printable flexible resistive memory.
Ultrafast memories for flexible electronics
04 April, 2017Engineering experts have developed what they claim are the quickest, smallest, highest-capacity memories for flexible and transparent applications, using a hybrid of graphene oxide and titanium oxide.
Alliance Memory AS4C1G8MD3L CMOS DDR3L SDRAM memory device
07 February, 2017The Alliance Memory monolithic high-speed, low-voltage AS4C1G8MD3L CMOS DDR3L SDRAM memory device has an 8 Gb density in the 78-ball, 9 x 13.2 mm lead-free FBGA package.
Fujitsu Semiconductor 4 Mb ReRAM MB85AS4MT memory
31 October, 2016The Fujitsu Semiconductor 4 Mb ReRAM MB85AS4MT memory operates with a wide range of power supply voltage, from 1.65 to 3.6 V. It features a small average current in read operations of 0.2 mA at a maximum operating frequency of 5 MHz.
XJTAG XJFlash in-system programming technology
14 October, 2016XJTAG XJFlash in-system programming technology provides users with fast programming when configuring memory attached to the processor subsystems of the FPGA SoCs.
Fujitsu improves GPU memory efficiency
22 September, 2016Fujitsu Laboratories has announced the development of technology to streamline the internal memory of GPUs to support the growing neural network scale that works to heighten machine learning accuracy.
STMicroelectronics M24 4-ball WLCSP serial EEPROM range
19 January, 2016STMicroelectronics has extended its M24 serial EEPROM family with four devices that are fully compatible with the 4-ball WLCSP (wafer-level chip-scale package) footprint. The additions enable the ability to connect two or more 4-pin EEPROMs to the same I2C bus with an individual I2C address hard-wired internally.
Micron XTRMFlash memory
22 October, 2015Micron Technology has announced XTRMFlash memory, a NOR flash solution designed to meet the demand for 'instant-on' performance and fast system responsiveness in automotive, industrial and consumer applications.
Toshiba 16-die stacked NAND flash memory with TSV technology
11 August, 2015Toshiba has announced the development of a 16-die (max) stacked NAND flash memory utilising Through Silicon Via (TSV) technology.
Alliance Memory AS4C512M16D3L CMOS DDR3L SDRAM
16 July, 2015Alliance Memory has introduced a monolithic high-speed, low-voltage CMOS double data rate 3 synchronous DRAM (DDR3L SDRAM) with an 8 Gb density in the 96-ball, 9 x 14 mm, lead-free FBGA package.
Microchip SuperFlash memory devices
25 March, 2015Microchip Technology has announced the SST26VF 3 V Serial Quad I/O interface (or SQI interface) SuperFlash memory devices.
Cypress QDR-IV SRAM
25 March, 2015Cypress now offers the QDR-IV SRAM from the consortium-defined QDR product line. The range includes the QDR-IV Xtreme Performance (XP) and QDR-IV High Performance (HP).
Toshiba NFC built-in SDHC memory card
02 February, 2015Toshiba's Semiconductor & Storage Products Company has launched an SDHC memory card with built-in NFC (near field communication) functions in sizes of 8, 16 and 32 GB.
Micron NAND and NOR Flash MCP portfolio
24 November, 2014Micron Technology's MCP portfolio combines high-performance, low-power Flash and DRAM into various density combinations, all packaged in ultrasmall solutions to save board space and enable users to design optimum products.
element14 signs deal with Swissbit AG
30 July, 2014element14 has signed a direct agreement with Swissbit AG, a DRAM module and flash storage manufacturer.
