Magnetic switching component suitable for spintronics
27 June, 2019Researchers have created an electronic component that demonstrates functions and abilities important to future generations of computational logic and memory devices.
Ferrimagnetic materials make spintronic memory more stable
17 December, 2018A new magnetic memory device is able to manipulate digital information 20 times more efficiently and with 10 times more stability than commercial spintronic digital memories.
Thanks for the memristors
25 January, 2018US scientists have unveiled the inner workings of memristors, which can vary their electrical resistance based on the memory of past activity.
Advantech SQRAM DDR4 2666 server memory
01 January, 2018Advantech's SQRAM-DDR4-2666 server memory delivers high performance and is fully compatible with Intel Xeon scalable platforms.
Ultrafast magnetic reversal for high-performance, low-power memory
20 November, 2017US researchers have developed an ultrafast method for electrically controlling magnetism in certain metals. Their breakthrough could lead to increased performance and more energy-efficient computer memory and processing technologies.
Inkjet-printable electronics on the way
11 April, 2017Researchers from Germany and Canada are paving the way for mass-producing printable electronics by demonstrating a fully inkjet-printable flexible resistive memory.
Ultrafast memories for flexible electronics
04 April, 2017Engineering experts have developed what they claim are the quickest, smallest, highest-capacity memories for flexible and transparent applications, using a hybrid of graphene oxide and titanium oxide.
Alliance Memory AS4C1G8MD3L CMOS DDR3L SDRAM memory device
07 February, 2017The Alliance Memory monolithic high-speed, low-voltage AS4C1G8MD3L CMOS DDR3L SDRAM memory device has an 8 Gb density in the 78-ball, 9 x 13.2 mm lead-free FBGA package.
Fujitsu Semiconductor 4 Mb ReRAM MB85AS4MT memory
31 October, 2016The Fujitsu Semiconductor 4 Mb ReRAM MB85AS4MT memory operates with a wide range of power supply voltage, from 1.65 to 3.6 V. It features a small average current in read operations of 0.2 mA at a maximum operating frequency of 5 MHz.
XJTAG XJFlash in-system programming technology
14 October, 2016XJTAG XJFlash in-system programming technology provides users with fast programming when configuring memory attached to the processor subsystems of the FPGA SoCs.
Fujitsu improves GPU memory efficiency
22 September, 2016Fujitsu Laboratories has announced the development of technology to streamline the internal memory of GPUs to support the growing neural network scale that works to heighten machine learning accuracy.
STMicroelectronics M24 4-ball WLCSP serial EEPROM range
19 January, 2016STMicroelectronics has extended its M24 serial EEPROM family with four devices that are fully compatible with the 4-ball WLCSP (wafer-level chip-scale package) footprint. The additions enable the ability to connect two or more 4-pin EEPROMs to the same I2C bus with an individual I2C address hard-wired internally.
Micron XTRMFlash memory
22 October, 2015Micron Technology has announced XTRMFlash memory, a NOR flash solution designed to meet the demand for 'instant-on' performance and fast system responsiveness in automotive, industrial and consumer applications.
Toshiba 16-die stacked NAND flash memory with TSV technology
11 August, 2015Toshiba has announced the development of a 16-die (max) stacked NAND flash memory utilising Through Silicon Via (TSV) technology.
Alliance Memory AS4C512M16D3L CMOS DDR3L SDRAM
16 July, 2015Alliance Memory has introduced a monolithic high-speed, low-voltage CMOS double data rate 3 synchronous DRAM (DDR3L SDRAM) with an 8 Gb density in the 96-ball, 9 x 14 mm, lead-free FBGA package.
