Components > Memories

Universal computer memory could replace DRAM

10 July, 2019

The inventors of the device used quantum mechanics to solve the dilemma of choosing between stable, long-term data storage and low-energy writing and erasing.


Magnetic switching component suitable for spintronics

27 June, 2019

Researchers have created an electronic component that demonstrates functions and abilities important to future generations of computational logic and memory devices.


Ferrimagnetic materials make spintronic memory more stable

17 December, 2018

A new magnetic memory device is able to manipulate digital information 20 times more efficiently and with 10 times more stability than commercial spintronic digital memories.


Thanks for the memristors

25 January, 2018

US scientists have unveiled the inner workings of memristors, which can vary their electrical resistance based on the memory of past activity.


Advantech SQRAM DDR4 2666 server memory

01 January, 2018

Advantech's SQRAM-DDR4-2666 server memory delivers high performance and is fully compatible with Intel Xeon scalable platforms.


Ultrafast magnetic reversal for high-performance, low-power memory

20 November, 2017

US researchers have developed an ultrafast method for electrically controlling magnetism in certain metals. Their breakthrough could lead to increased performance and more energy-efficient computer memory and processing technologies.


Inkjet-printable electronics on the way

11 April, 2017

Researchers from Germany and Canada are paving the way for mass-producing printable electronics by demonstrating a fully inkjet-printable flexible resistive memory.


Ultrafast memories for flexible electronics

04 April, 2017

Engineering experts have developed what they claim are the quickest, smallest, highest-capacity memories for flexible and transparent applications, using a hybrid of graphene oxide and titanium oxide.


Alliance Memory AS4C1G8MD3L CMOS DDR3L SDRAM memory device

07 February, 2017

The Alliance Memory monolithic high-speed, low-voltage AS4C1G8MD3L CMOS DDR3L SDRAM memory device has an 8 Gb density in the 78-ball, 9 x 13.2 mm lead-free FBGA package.


Fujitsu Semiconductor 4 Mb ReRAM MB85AS4MT memory

31 October, 2016

The Fujitsu Semiconductor 4 Mb ReRAM MB85AS4MT memory operates with a wide range of power supply voltage, from 1.65 to 3.6 V. It features a small average current in read operations of 0.2 mA at a maximum operating frequency of 5 MHz.


XJTAG XJFlash in-system programming technology

14 October, 2016

XJTAG XJFlash in-system programming technology provides users with fast programming when configuring memory attached to the processor subsystems of the FPGA SoCs.


Fujitsu improves GPU memory efficiency

22 September, 2016

Fujitsu Laboratories has announced the development of technology to streamline the internal memory of GPUs to support the growing neural network scale that works to heighten machine learning accuracy.


STMicroelectronics M24 4-ball WLCSP serial EEPROM range

19 January, 2016

STMicroelectronics has extended its M24 serial EEPROM family with four devices that are fully compatible with the 4-ball WLCSP (wafer-level chip-scale package) footprint. The additions enable the ability to connect two or more 4-pin EEPROMs to the same I2C bus with an individual I2C address hard-wired internally.


Micron XTRMFlash memory

22 October, 2015

Micron Technology has announced XTRMFlash memory, a NOR flash solution designed to meet the demand for 'instant-on' performance and fast system responsiveness in automotive, industrial and consumer applications.


Toshiba 16-die stacked NAND flash memory with TSV technology

11 August, 2015

Toshiba has announced the development of a 16-die (max) stacked NAND flash memory utilising Through Silicon Via (TSV) technology.


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