Swiss and UK researchers have discovered structures based on two-dimensional materials that emit tailor-made light in any colour you could wish for.
STMicroelectronics and TSMC are collaborating to accelerate the development of gallium nitride (GaN) process technology and the supply of both discrete and integrated GaN devices to market.
Researchers devised a way to make nanosized semiconductors on a metal surface, generating localised heat on a gold nanoparticle within a butterfly-shaped nanostructure.
Renesas Electronics has announced five 8.2 mm creepage photocouplers, claimed to be the world's smallest isolation devices for industrial automation equipment and solar inverters.
The method could be upscaled for manufacturing purified batches of single-wall carbon nanotubes for use in high-performance electronic devices.
It turns out that the surface of a commonly used compound semiconductor material — gallium arsenide (GaAs) — is not as stable as previously thought.
Researchers have announced a commercially viable way to manufacture integrated Silicon III-V chips with high-performance III-V devices inserted into their design.
Researchers sent high-frequency sound waves across a modified semiconductor device to direct the behaviour of a single electron, with efficiencies in excess of 99%.
Scientists have produced a novel organic substance that can potentially be adapted to form an n-type semiconductor, with wide-ranging applications in the field of electronics.
Scientists have modified a previous synthesis method to create a new semiconducting polymer with remarkable properties that could be used in organic electronic devices.
Physicists have developed a new technique to measure the energy and momentum of electrons in operating microelectronic devices made of atomically thin, two-dimensional materials.
Renesas Electronics has announced the RV1S9x60A family of 15 Mbps photocouplers, designed to withstand the harsh operating environments of industrial and factory automation equipment.
Researchers have created an ultrafast and highly sensitive 'avalanche photodiode' (APD) that generates less electronic noise than its silicon rivals.
South Korean researchers have developed a graphene-based high-performance transmission line with a faster operating speed than those using existing metals.
A combination of nanofabrication techniques and conventional semiconductor materials has been used to engineer an artificial version of graphene — one which can be manufactured on an industrial scale.