Vishay 8 V p-channel TrenchFET power MOSFET
11 February, 2011 byVishay has introduced an 8 V p-channel TrenchFET power MOSFET with what is claimed to be the lowest on-resistance ever achieved for a p-channel device in the thermally enhanced PowerPAK SC-70 2 by 2 mm footprint area.
Renesas PS7901D-1A optical-coupled MOSFET
11 February, 2011 byRenesas has developed an optical-coupled MOSFET, the PS7901D-1A, that is claimed to achieve electrical isolation within the package by using light for signal transmission.
Avnet motor vehicle-qualified Gen 10.2 MOSFETs
06 September, 2010 byMotor vehicle-qualified 40 to 100 V Gen 10.2 MOSFETs are an expansion of IR’s family of qualified power MOSFETs specifically designed for applications requiring low on-state resistance.
Maxim MAX36051 security manager
05 August, 2010 byMaxim has introduced the MAX36051 security manager that provides 128 bytes of nonimprinting memory to securely store sensitive data, while drawing little battery power in standby mode (1.5 µA).
Chip revenue down by 114.4% in 2009
29 April, 2010The semiconductor industry will post a revenue decline for just the sixth time in the last 25 years, with worldwide revenue totalling $245 billion in 2009, an 11.4% decline from 2008, according to preliminary estimates by Gartner.
Semiconductor making made more energy efficient
09 December, 2009Scientists at the Department of Energy’s Lawrence Berkeley National Laboratory, in cooperation with the International SEMATECH Manufacturing Initiative, have released, for beta testing, a computer-based tool to help the world’s semiconductor manufacturing facilities evaluate and improve their energy efficiency.
Reliable power electronics for windmill generators
04 December, 2009In the megawatt range, high-power electronics applications need powerful semiconductors. However, even the largest semiconductors available today are still not strong enough for some applications. It is therefore necessary to connect them in parallel. The parallel connection of semiconductor devices in a traditional power electronics circuit is very common.
Reliable power electronics for windmill generators
02 December, 2009In the megawatt range, high-power electronics applications need powerful semiconductors. However, even the largest semiconductors available today are still not strong enough for some applications. It is therefore necessary to connect them in parallel. The parallel connection of semiconductor devices in a traditional power electronics circuit is very common.
Si substrate loss measured after ion implantation
01 December, 2009 by IMECIMEC has shown that spectroscopic ellipsometry can be used to measure Si substrate loss after ion implantation. With decreasing device dimensions, the need for this kind of metrology has become more and more important.
Spintronics research attracts $754,000 grant
01 November, 2009 by University of SurreyA team of researchers, from the University of Surrey in England and two other institutions, has been awarded a grant of around $754,000 to develop ultra-small-scale silicon structures for ‘spintronic’ semiconductors.
Giving electronics the big spin
01 October, 2009 by ICT ResultsEuropean researchers have developed novel concept devices using ferromagnetic semiconductors.
Sensor conditioning IC
15 September, 2009 byZMD has expanded its family of capacitive sensor signal conditioning devices with the wide dynamic range ZMD31210 cLite IC.
Energy-saving MCU
14 April, 2009 byPower consumption in CMOS ICs is broadly classified as dynamic power in an operating circuit, such as switching and static power, an example being leakage which is measured any time a circuit is powered on.
