National Semiconductor LM5113 half-bridge gate driver
05 August, 2011 byNational Semiconductor has introduced what is claimed to be the first 100 V half-bridge gate driver optimised for use with enhancement-mode gallium-nitride (GaN) power field-effect transistors in high-voltage power converters.
International Rectifier ultra-compact MOSFET range
04 August, 2011 byInternational Rectifier has extended its packaging with the introduction of a PQFN 2 x 2 mm package featuring its latest HEXFET MOSFET silicon that delivers an ultra-compact, high density solution for a wide variety of lower power applications including smart phones, tablet PCs, camcorders, digital still cameras and notebook PCs.
Flexible electronics
20 July, 2011SmartKem's semiconductor materials have achieved a TFT mobility rating higher than other traditional organic equivalents.
Future power could come from body movements
12 July, 2011After six years of effort, scientists are reporting development of the first commercially viable nanogenerator, a flexible chip that can use body movements - a finger pinch now en route to a pulse beat in the future - to generate electricity.
International Rectifier IRS2580DS Combo8 ballast-control IC
08 July, 2011 byInternational Rectifier has introduced what it claims is the first IC to integrate power factor correction and ballast control in a single compact 8-pin SO-8 package.
Diodes ultraminiature DFN1006-3 MOSFETs
05 July, 2011 byDiodes has unveiled a portfolio of MOSFETs in the ultraminiature DFN1006-3 package.
Semikron MiniSKiiP IGBT power semiconductor module
16 June, 2011 bySemikron has released its latest MiniSKiiP IGBT power semiconductor module, which is now also available in three-level topology.
Hybrid spintronic chips come closer
10 June, 2011 byResearchers have created what is claimed to be the first electronic circuit to merge traditional inorganic semiconductors with organic ‘spintronics’ - devices that use the spin of electrons to read, write and manipulate data.
Tri-Gate transistor set to storm industry
10 June, 2011 byIntel has announced what it calls a significant breakthrough in the evolution of the transistor, the microscopic building block of modern electronics.
Understanding and comparing IGBT module datasheets
10 June, 2011 by Dr Arendt Wintrich, application manager, SemikronThis might sound somewhat overdone but comparing IGBT modules using datasheets is not as easy as it might appear. A rough comparison can, of course, be made using the component blocking voltage (VCES, eg, 1200) and the nominal current (ICnom = 100, 200 A …).
Diodes ZXCT11xx series low-power, high-side current monitors
27 May, 2011 byWith an operating current of 3 µA, the ZXCT11xx series of low-power, high-side current monitors from Diodes provides accurate, high-efficiency measurement of load current in motor drive, overload protection and safety applications.
International Rectifier AUIRL7732S2/AUIRL7736M2 motor vehicle MOSFET
26 May, 2011 byInternational Rectifier has introduced a motor vehicle DirectFET2 power MOSFET chipset optimised for DC-DC applications used in internal combustion engine cars, and hybrid and electric vehicles.
Vishay AS1Px standard/AR1Px fast/AU1Px ultrafast rectifier range
26 May, 2011 byVishay has introduced nine series of low-profile, surface-mount standard, fast and ultrafast avalanche rectifiers with 20 MJ EAS avalanche capability and forward currents up to 4 A in SMPC packages.
Water could hold answer to graphene nanoelectronics
11 May, 2011 byResearchers at Rensselaer Polytechnic Institute in New York have developed a method for using water to tune the band gap of the nanomaterial graphene, opening the door to new graphene-based transistors and nanoelectronics.
AWR Corporation process design kit
06 May, 2011 byAWR Corporation has released a process design kit supporting Cree’s high-power gallium nitride (GaN) high electron mobility transistor (HEMT) monolithic microwave integrated circuit foundry process.
