Components

HaydonKerk environmentally and hermetically sealed switches

17 July, 2013 | Supplied by: Motion Technologies Pty Ltd

The HaydonKerk range of environmentally and hermetically sealed switches is designed for high reliability in extreme environments. The switches are filled with dry nitrogen.


Allied Data Systems fit-PC3 miniature fanless PC

16 July, 2013 | Supplied by: Allied Data Systems Pty Ltd

The fit-PC3 range of computers is designed around the AMD-embedded G-Series Fusion APU providing dual-core 64 bit x86 CPU @ 1.0-1.65 GHz with the AMD Radeon HD 6xxx GPU and supplemented by up to 8 GB DDR3 RAM. 


Compulab Intense PC ultrasmall form factor PC

15 July, 2013 | Supplied by: Allied Data Systems Pty Ltd

The Intense PC is the latest in the range of ultrasmall form factor PCs from Compulab. The Intense PC provides desktop class performance in a tiny, low-power form factor.


Enhanced yet affordable material for supercapacitors

12 July, 2013

Researchers at Ulsan National Institute of Science and Technology (UNIST) have developed a new method to massively synthesise enhanced yet affordable materials for supercapacitors.


New CNT ink enables see-through GPS devices

11 July, 2013

Linde Electronics, the global electronics business of The Linde Group, has launched a revolutionary new carbon nanotube ink to drive innovation in the development of next-generation displays, sensors and other electronic devices.


Boron arsenide rivals diamond as the best thermal conductor

10 July, 2013

An unlikely material, cubic boron arsenide, could deliver an extraordinarily high thermal conductivity on par with the industry standard set by costly diamond, according to researchers from Boston College and the Naval Research Laboratory.


Graphene keeps electronics cool

04 July, 2013

A layer of graphene can reduce the working temperature in hotspots inside a processor by up to 25% - which can significantly extend the working life of computers and other electronics.


Transistors from nanoscale insulators

03 July, 2013

It is now possible - even routine - to place millions of transistors on a single silicon chip. But at the rate the technology is progressing, in 10 or 20 years, transistors won’t get any smaller.


Lantronix XPort 05R embedded ethernet device server

02 July, 2013 | Supplied by: Soanar Limited

The Lantronix XPort embedded ethernet device server is a compact, integrated solution to web enable virtually any device with serial capability. By incorporating it into a product design, manufacturers can quickly and easily offer serial-to-ethernet networking capability as a standard feature.


Quake Q-Puck Iridium modem with integrated antenna

01 July, 2013 | Supplied by: M2M Connectivity

The Q-Puck comprises an Iridium modem embedded with an Iridium antenna in a single IP-rated package with serial/power. The product is fully Iridium-qualified and enables easy connection to Iridium’s SBD satellite network from an existing application with the minimum of hardware development.


Thin-film diamonds for future electronics

01 July, 2013

A team of researchers has developed a new method for creating thin films of boron-doped diamond at temperatures low enough to coat electronic devices.


Shaping sound with audio beamforming

01 July, 2013 by Werner de Bruijn, Philips Research | Supplied by: MathWorks Australia

Philips Research engineers have developed audio beamforming technology that varies the TV sound levels for two people in the same room.


element14’s ‘wearable technology’ challenge for engineers

30 June, 2013

element14 is challenging engineers and developers to design and develop their own piece of wearable technology.


Tallysman Wireless TW4600 Iridium dual-feed antenna

28 June, 2013 | Supplied by: Step Global Pty Ltd

The TW4600 is claimed to be the smallest dual-feed, high-performance Iridium antenna available. The product’s wideband dual feed patch element has a good axial ratio across the entire Iridium bandwidth.


Transistors for next-gen green electronics

28 June, 2013

Researchers at UC Santa Barbara, in collaboration with the University of Notre Dame, have recently demonstrated the highest reported drive current on a transistor made of a monolayer of tungsten diselenide (WSe2), a 2-dimensional atomic crystal categorised as a transition metal dichalcogenide (TMD).


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