International Rectifier IRS2052M 2-channel class D audio driver IC
18 May, 2011 | Supplied by: Avnet Electronics Marketing
The IRS2052M 2-channel class D audio IC for home theatre systems and car audio amplifiers has been released.
Emerson CPCI7203 3U CompactPCI blade single board computer
18 May, 2011 | Supplied by: Emerson Network Power
The portfolio of rugged embedded single board computers based on Intel Core i7 processors has been extended with the launch of a conduction-cooled variant of its CPCI7203 3U CompactPCI blade.
Fluke DTX-1800 cable analyser
18 May, 2011 | Supplied by: TechRentals
Available to rent is the Fluke DTX-1800 CableAnalyser 900 MHz CAT 7 that is claimed to test cable certification up to Category 7 three times faster.
Future brightens for green LED
16 May, 2011
Researchers at Rensselaer Polytechnic Institute have developed a new method for manufacturing green-coloured LEDs with greatly enhanced light output.
Flat panel TV growth slows
13 May, 2011
According to the latest DisplaySearch Quarterly Advanced Global TV Shipment and Forecast Report, total TV shipments grew by nearly 18% Y/Y in 2010 to 248 million units.
Water could hold answer to graphene nanoelectronics
11 May, 2011
Researchers at Rensselaer Polytechnic Institute in New York have developed a method for using water to tune the band gap of the nanomaterial graphene, opening the door to new graphene-based transistors and nanoelectronics.
Standby comfortable but energy inefficient
11 May, 2011 by Reinhard Zimmermann
The former ‘green’ theme of energy efficiency has become a household issue in an energy-conscious society. The old filament bulb disappears step by step, and washing machines and dishwashers have become unsaleable without energy-saving programs. But most industrialised societies waste energy on a massive scale by indulging in comfortable ‘standby mode’ in domestic electronics.
Data bus concepts and considerations
11 May, 2011 | Supplied by: Unitronix Pty Ltd
The digital data bus MIL-STD-1553B was designed in the early 1970s to replace analog point-to-point wire bundles between electronic instruments. The latest version of the serial local area network (LAN) for military avionics known as MIL-STD-1553B was issued in 1978. Since then, various notices have been published to update the standard and after 30 years the data bus continues to be the most popular militarised network.
Ferroelectrics may lead to new memory
09 May, 2011
The novel properties of ferroelectric materials, claimed to have been discovered at the Department of Energy’s Oak Ridge National Laboratory in the US, are moving scientists closer to realising a new paradigm of electronic memory storage.
Advantech embedded platform series
06 May, 2011 | Supplied by: Advantech Australia Pty Ltd
A series of embedded boards based on the second-generation Intel Core i7 processor, featuring intelligent performance, power efficiency and integrated Intel HD graphics with DX10.1 support, has been released.
AWR Corporation process design kit
06 May, 2011 | Supplied by: Clarke & Severn Electronic Solutions
AWR Corporation has released a process design kit supporting Cree’s high-power gallium nitride (GaN) high electron mobility transistor (HEMT) monolithic microwave integrated circuit foundry process.
Cree RF CGH35240F and CGH31240F S-band HEMTs
06 May, 2011 | Supplied by: Clarke & Severn Electronic Solutions
The Cree RF CGH35240F and CGH31240F are S-band, 240 W pulsed radar GaN HEMT transistors fully matched to 50 Ω. The CGH31240F operates from 2.7-3.1 GHz, while the CGH35240 operates from 3.1-3.5 GHz. They are both suitable for short and long pulse applications with good signal fidelity.
Cree RF CGH40006S GaN HEMT transistor
06 May, 2011 | Supplied by: Clarke & Severn Electronic Solutions
The Cree RF CGH40006S is claimed to be the first GaN HEMT transistor in a QFN plastic package.
Cree RF CMPA2735075F power amplifier
06 May, 2011 | Supplied by: Clarke & Severn Electronic Solutions
The CMPA2735075F from Cree RF is a gallium nitride (GaN) high electron mobility transistor (HEMT)-based monolithic microwave integrated circuit. GaN has superior properties compared with silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
Cree RF CGH40045 pill package transistor
06 May, 2011 | Supplied by: Clarke & Severn Electronic Solutions
The Cree RF GaN HEMT transistor CGH40045 is now available in a thermally enhanced pill package, suitable for small form factor HPAs, and allows reflow soldering to a heat sink. It offers the same performance in a smaller size.
