Clarke & Severn Electronics GaN HEMT transsistors
14 March, 2011Cree has released GaN HEMT transistors for frequency-agile, software defined radios, 3G/4G telecom BTS, C-OFDM data-links and satcom applications.
Molybdenite transistor claimed as a ‘first’
23 February, 2011Working transistors made from flakes of molybdenite have been made in Switzerland.
International Rectifier PQFN power MOSFET family
23 November, 2010 byInternational Rectifier has introduced a family of 25 and 30 V devices featuring HEXFET MOSFET silicon in a new performance PQFN 3 x 3 package that delivers high density for DC-DC converters in telecom, netcom and high-end desktop and notebook computers.
International Rectifier AUIRS2191S/AUIRGP50B60PD1 motor vehicle drivers
23 November, 2010 byInternational Rectifier has introduced the AUIRS2191S 600 V driver IC and AUIRGP50B60PD1 600 V non-punch-through insulated gate bipolar transistor for use in DC-DC motor vehicle applications.
Stable patterned electrets for microsystem applications
14 October, 2010Imec and the Holst Centre have developed stable patterned electrets with feature sizes at least down to 20 µm. The technology consists of creating a charged profile in an SiO2/Si3N4 structure by exploiting the difference in energy between the charge traps in either layer and at their interface. Patterned electret layers can be used for a plurality of technical applications such as micromotors, sensors, actuators and energy scavengers.
International Rectifier -30 V power MOSFET family
23 September, 2010 byInternational Rectifier has released a family of -30 V devices featuring the company’s latest P-channel MOSFET silicon in an SO-8 package for battery charge and discharge switches and system/load switches used in DC applications.
International Rectifier -30 V device series
22 September, 2010International Rectifier has introduced a family of -30 V devices featuring the company’s latest P-channel MOSFET silicon in an SO-8 package for battery charge and discharge switches, and system/load switches used in DC applications.
International Rectifier AUIRF7648M2 and AUIRF7669L2 power MOSFETs
22 September, 2010International Rectifier has introduced two motor vehicle DirectFETR2 power MOSFETs optimised with low gate charge for switching applications including switch mode power supplies, class d audio systems, high intensity discharge lighting, and other power conversion applications.
Diodes SOT963 bipolar transistor, MOSFET and TVS device package
17 September, 2010 byDiodes has introduced bipolar transistor, MOSFET and TVS devices in the ultra-small SOT963 package, that are claimed to achieve the same or better performance than much larger packaged parts.
IGBT selection tool
07 September, 2010International Rectifier has available an online insulated gate bipolar transistor (IGBT) selection tool that enables design optimisation in a wide range of applications including motor drives, uninterruptible power supplies, solar inverters and welding.
Avnet 10.2 MOSFETs
05 August, 2010 byMotor vehicle qualified 40 to 100 V 10.2 MOSFETs are an expansion of IR’s family of qualified power MOSFETs specifically designed for applications requiring low on-state resistance (RDS(on)).
International Rectifier family of motor vehicle qualified MOSFETs
05 August, 2010 byInternational Rectifier has introduced its first dedicated family of motor vehicle qualified MOSFETs for a range of applications requiring low on-state resistance including electric power steering, integrated starter alternator pump and motor control, DC-DC conversion, battery switch, and other heavy loads on internal combustion engine and hybrid vehicle platforms.
Hydrogen helps smooth Ge deposition
16 June, 2010 byImec has shown that the presence of hydrogen and/or inert species during Ge deposition significantly improves the quality of the Ge layers grown on Si by solid phase epitaxy (SPE). The resulting layers have excellent crystalline quality and low surface roughness, making SPE a valuable alternative for conventional heteroepitaxy which is performed typically at much higher temperatures.
International Rectifier vehicle MOSFETs range
08 June, 2010 byInternational Rectifier has introduced the company’s first dedicated family of motor vehicle-qualified MOSFETs for a range of applications requiring low on-state resistance including electric power steering, integrated starter alternator pump and motor control, DC-DC conversion, battery switch and other heavy loads on internal combustion engine and hybrid vehicle platforms.
GaN-on-Si device opens market
20 January, 2010IMEC has produced simple and robust GaN-on-Si double heterostructure FET (field effect transistor) architecture for GaN-on-Si power switching devices.
