Components > Transistors

International Rectifier -30 V power MOSFET family

23 September, 2010 by

International Rectifier has released a family of -30 V devices featuring the company’s latest P-channel MOSFET silicon in an SO-8 package for battery charge and discharge switches and system/load switches used in DC applications.


International Rectifier AUIRF7648M2 and AUIRF7669L2 power MOSFETs

22 September, 2010

International Rectifier has introduced two motor vehicle DirectFETR2 power MOSFETs optimised with low gate charge for switching applications including switch mode power supplies, class d audio systems, high intensity discharge lighting, and other power conversion applications.


International Rectifier -30 V device series

22 September, 2010

International Rectifier has introduced a family of -30 V devices featuring the company’s latest P-channel MOSFET silicon in an SO-8 package for battery charge and discharge switches, and system/load switches used in DC applications.


Diodes SOT963 bipolar transistor, MOSFET and TVS device package

17 September, 2010 by

Diodes has introduced bipolar transistor, MOSFET and TVS devices in the ultra-small SOT963 package, that are claimed to achieve the same or better performance than much larger packaged parts.


IGBT selection tool

07 September, 2010

International Rectifier has available an online insulated gate bipolar transistor (IGBT) selection tool that enables design optimisation in a wide range of applications including motor drives, uninterruptible power supplies, solar inverters and welding.


Avnet 10.2 MOSFETs

05 August, 2010 by

Motor vehicle qualified 40 to 100 V 10.2 MOSFETs are an expansion of IR’s family of qualified power MOSFETs specifically designed for applications requiring low on-state resistance (RDS(on)).


International Rectifier family of motor vehicle qualified MOSFETs

05 August, 2010 by

International Rectifier has introduced its first dedicated family of motor vehicle qualified MOSFETs for a range of applications requiring low on-state resistance including electric power steering, integrated starter alternator pump and motor control, DC-DC conversion, battery switch, and other heavy loads on internal combustion engine and hybrid vehicle platforms.


Hydrogen helps smooth Ge deposition

16 June, 2010 by

Imec has shown that the presence of hydrogen and/or inert species during Ge deposition significantly improves the quality of the Ge layers grown on Si by solid phase epitaxy (SPE). The resulting layers have excellent crystalline quality and low surface roughness, making SPE a valuable alternative for conventional heteroepitaxy which is performed typically at much higher temperatures.


International Rectifier vehicle MOSFETs range

08 June, 2010 by

International Rectifier has introduced the company’s first dedicated family of motor vehicle-qualified MOSFETs for a range of applications requiring low on-state resistance including electric power steering, integrated starter alternator pump and motor control, DC-DC conversion, battery switch and other heavy loads on internal combustion engine and hybrid vehicle platforms.


GaN-on-Si device opens market

20 January, 2010

IMEC has produced simple and robust GaN-on-Si double heterostructure FET (field effect transistor) architecture for GaN-on-Si power switching devices.


Personalised medicine and the DNA transistor

24 November, 2009

In an effort to build a nanoscale DNA sequencer, IBM scientists are drilling nano-sized holes in computer-like chips and passing DNA strands through them to read the information contained within their genetic code.


SAMFET secrets revealed

18 November, 2009

An international team of researchers from the Netherlands, Russia and Austria has found that monolayer coverage and channel length set the mobility in self-assembled monolayer field-effect transistors (SAMFETs).


Optimisations for future transistors

11 November, 2009

IMEC has achieved promising results in the race to scale CMOS to 22 nm and below.


Can DirectFET

20 October, 2009 by

International Rectifier has introduced the IRF6718 DirectFET MOSFET.


Backlighting MOSFETs

19 October, 2009 by

Diodes Inc has extended its MOSFET range with the introduction of 15 devices tailored to the needs of LCD TV and monitor backlighting.


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