IGBT selection tool
07 September, 2010International Rectifier has available an online insulated gate bipolar transistor (IGBT) selection tool that enables design optimisation in a wide range of applications including motor drives, uninterruptible power supplies, solar inverters and welding.
International Rectifier family of motor vehicle qualified MOSFETs
05 August, 2010 byInternational Rectifier has introduced its first dedicated family of motor vehicle qualified MOSFETs for a range of applications requiring low on-state resistance including electric power steering, integrated starter alternator pump and motor control, DC-DC conversion, battery switch, and other heavy loads on internal combustion engine and hybrid vehicle platforms.
Avnet 10.2 MOSFETs
05 August, 2010 byMotor vehicle qualified 40 to 100 V 10.2 MOSFETs are an expansion of IR’s family of qualified power MOSFETs specifically designed for applications requiring low on-state resistance (RDS(on)).
Hydrogen helps smooth Ge deposition
16 June, 2010 byImec has shown that the presence of hydrogen and/or inert species during Ge deposition significantly improves the quality of the Ge layers grown on Si by solid phase epitaxy (SPE). The resulting layers have excellent crystalline quality and low surface roughness, making SPE a valuable alternative for conventional heteroepitaxy which is performed typically at much higher temperatures.
International Rectifier vehicle MOSFETs range
08 June, 2010 byInternational Rectifier has introduced the company’s first dedicated family of motor vehicle-qualified MOSFETs for a range of applications requiring low on-state resistance including electric power steering, integrated starter alternator pump and motor control, DC-DC conversion, battery switch and other heavy loads on internal combustion engine and hybrid vehicle platforms.
GaN-on-Si device opens market
20 January, 2010IMEC has produced simple and robust GaN-on-Si double heterostructure FET (field effect transistor) architecture for GaN-on-Si power switching devices.
Personalised medicine and the DNA transistor
24 November, 2009In an effort to build a nanoscale DNA sequencer, IBM scientists are drilling nano-sized holes in computer-like chips and passing DNA strands through them to read the information contained within their genetic code.
SAMFET secrets revealed
18 November, 2009An international team of researchers from the Netherlands, Russia and Austria has found that monolayer coverage and channel length set the mobility in self-assembled monolayer field-effect transistors (SAMFETs).
Optimisations for future transistors
11 November, 2009IMEC has achieved promising results in the race to scale CMOS to 22 nm and below.
Can DirectFET
20 October, 2009 byInternational Rectifier has introduced the IRF6718 DirectFET MOSFET.
Backlighting MOSFETs
19 October, 2009 byDiodes Inc has extended its MOSFET range with the introduction of 15 devices tailored to the needs of LCD TV and monitor backlighting.
MOSFET family
16 October, 2009 byInfineon has released the OptiMOS 375 V MOSFET family with characteristics suitable for energy-efficient power conversion.
IGBT driver
15 October, 2009 byQC841 is a hybrid integrated IGBT driver with built-in electrical isolation between power devices and control circuits with the high CMRR optocoupler.
Novel scheme to fabricate Ge virtual substrates
08 September, 2009IMEC has used selective epitaxial growth and chemical mechanical polishing to obtain Ge virtual substrates with low threading dislocation density.
Transistors of the future
04 August, 2009The fast pace of growing computing power could be sustained for many years to come due to new research from Britain's National Physical Laboratory (NPL) that is applying advanced techniques to magnetic semiconductors.
