Stable patterned electrets for microsystem applications
14 October, 2010Imec and the Holst Centre have developed stable patterned electrets with feature sizes at least down to 20 µm. The technology consists of creating a charged profile in an SiO2/Si3N4 structure by exploiting the difference in energy between the charge traps in either layer and at their interface. Patterned electret layers can be used for a plurality of technical applications such as micromotors, sensors, actuators and energy scavengers.
International Rectifier -30 V power MOSFET family
23 September, 2010 byInternational Rectifier has released a family of -30 V devices featuring the company’s latest P-channel MOSFET silicon in an SO-8 package for battery charge and discharge switches and system/load switches used in DC applications.
International Rectifier -30 V device series
22 September, 2010International Rectifier has introduced a family of -30 V devices featuring the company’s latest P-channel MOSFET silicon in an SO-8 package for battery charge and discharge switches, and system/load switches used in DC applications.
International Rectifier AUIRF7648M2 and AUIRF7669L2 power MOSFETs
22 September, 2010International Rectifier has introduced two motor vehicle DirectFETR2 power MOSFETs optimised with low gate charge for switching applications including switch mode power supplies, class d audio systems, high intensity discharge lighting, and other power conversion applications.
Diodes SOT963 bipolar transistor, MOSFET and TVS device package
17 September, 2010 byDiodes has introduced bipolar transistor, MOSFET and TVS devices in the ultra-small SOT963 package, that are claimed to achieve the same or better performance than much larger packaged parts.
IGBT selection tool
07 September, 2010International Rectifier has available an online insulated gate bipolar transistor (IGBT) selection tool that enables design optimisation in a wide range of applications including motor drives, uninterruptible power supplies, solar inverters and welding.
Avnet 10.2 MOSFETs
05 August, 2010 byMotor vehicle qualified 40 to 100 V 10.2 MOSFETs are an expansion of IR’s family of qualified power MOSFETs specifically designed for applications requiring low on-state resistance (RDS(on)).
International Rectifier family of motor vehicle qualified MOSFETs
05 August, 2010 byInternational Rectifier has introduced its first dedicated family of motor vehicle qualified MOSFETs for a range of applications requiring low on-state resistance including electric power steering, integrated starter alternator pump and motor control, DC-DC conversion, battery switch, and other heavy loads on internal combustion engine and hybrid vehicle platforms.
Hydrogen helps smooth Ge deposition
16 June, 2010 byImec has shown that the presence of hydrogen and/or inert species during Ge deposition significantly improves the quality of the Ge layers grown on Si by solid phase epitaxy (SPE). The resulting layers have excellent crystalline quality and low surface roughness, making SPE a valuable alternative for conventional heteroepitaxy which is performed typically at much higher temperatures.
International Rectifier vehicle MOSFETs range
08 June, 2010 byInternational Rectifier has introduced the company’s first dedicated family of motor vehicle-qualified MOSFETs for a range of applications requiring low on-state resistance including electric power steering, integrated starter alternator pump and motor control, DC-DC conversion, battery switch and other heavy loads on internal combustion engine and hybrid vehicle platforms.
GaN-on-Si device opens market
20 January, 2010IMEC has produced simple and robust GaN-on-Si double heterostructure FET (field effect transistor) architecture for GaN-on-Si power switching devices.
Personalised medicine and the DNA transistor
24 November, 2009In an effort to build a nanoscale DNA sequencer, IBM scientists are drilling nano-sized holes in computer-like chips and passing DNA strands through them to read the information contained within their genetic code.
SAMFET secrets revealed
18 November, 2009An international team of researchers from the Netherlands, Russia and Austria has found that monolayer coverage and channel length set the mobility in self-assembled monolayer field-effect transistors (SAMFETs).
Optimisations for future transistors
11 November, 2009IMEC has achieved promising results in the race to scale CMOS to 22 nm and below.
Can DirectFET
20 October, 2009 byInternational Rectifier has introduced the IRF6718 DirectFET MOSFET.
