Power MOSFET
28 July, 2009Vishay has unveiled the first device built on its p-channel TrenchFET Gen III technology, a 20 V device with a claimed lowest on-resistance ever achieved for a p-channel MOSFET with the footprint area of an SO-8.
'Noisy' transistors gets a rethink
09 June, 2009There is a newly found flaw in our understanding of transistor noise, a phenomenon affecting the electronic on-off switch that makes computer circuits possible.
N-channel MOSFET driver
27 April, 2009 byLinear Technology has introduced the LTC4447, a high-speed synchronous MOSFET driver designed to drive upper and lower power N-channel MOSFETs in a synchronous rectified converter topology.
Punch-through IGBTs
17 April, 2009 byMicrosemi has announced a family of high-speed power MOS8 insulated gate bipolar transistors featuring punch-through technology in 600 and 900 V devices.
Energy-efficient transistors
14 April, 2009 byCentral Semiconductor has released the Femtomini CMNT3904E (NPN) and CMNT3906E (PNP) low VCE(SAT) transistors, packaged in the SOT-953.
Graphene discovery wins major award
08 September, 2008Two physicists from The University of Manchester who discovered the world’s thinnest material have scooped a major award for their work.
DirectFET MOSFETs
01 August, 2008International Rectifier has introduced a family of 30 V directFET MOSFETs optimised for synchronous buck converter designs for notebook computers, server CPU power, graphics and memory voltage regulator applications.
Power transistor distributor
08 July, 2008Richardson Electronics has signed a global distribution agreement with HVVi Semiconductors of Phoenix, AZ, to distribute its RF power transistors, based on HVVi’s HVVFET architecture.
Another step towards GaN power devices
27 June, 2008IMEC and AIXTRON have demonstrated the growth of AlGaN/GaN heterostructures on 200 mm silicon wafers. This demonstration is another step towards fabricating low-cost GaN power devices for high-efficiency/high-power systems beyond the silicon limits.
Models make transistors more efficient
04 June, 2008New models of how two types of power transistors perform that will result in more efficient smart electrical circuits, making technologies such as cars and home appliances more reliable and environmentally friendly, have been developed by European researchers.
Alternative to silicon chip
04 June, 2008A transistor that uses gallium nitride (GaN) instead of silicon has been invented. It can reduce power consumption and improve the efficiency of power electronics systems in everything from motor drives and hybrid vehicles to house appliances and defence equipment.
Transistor Holy Grail nearer
13 May, 2008Better switching performance of transistors of disordered silicon films can be achieved by making the conduction channel in the device very thin, according to research at the University of Surrey in England.
Graphene used to create tiny transistor
06 May, 2008Graphene has been used to create the world’s smallest transistor, one atom thick and 10 atoms wide, according to Dr Kostya Novoselov and Prof Andre Geim from The School of Physics and Astronomy at The University of Manchester.
Fabrication of CNT transistor using coating process
17 April, 2008NEC Corporation has developed a carbon nanotube (CNT) transistor using a coating process. The basic operation of the new transistor with advanced characteristics has been verified, confirming its application in the printed electronics field.
100 W GaN-on-Si power transistor for Wi MAX applications
08 August, 2007Nitronex, an innovative developer and manufacturer of high-performance RF power transistors for the commercial and broadband wireless infrastructure markets, has developed a 28 V, 100 W gallium nitride high electron mobility transistor (HEMT), ideal for WiMAX applications. Designed using Nitronex's patented Sigantic NFR1 process, the NPT25100 GaN-on-Si power transistor is designed specifically for 2.3 - 2.7 GHz WiMAX applications. Typical performance is rated using a mobile WiMAX waveform defined as a single carrier OFDM signal 64-QAM ¾, 8 burst, 3.5 MHz channel bandwidth, 10.3 dB PAR @ .01% probability on CCDF. Under these test conditions, the NPT25100 will deliver 14.5 dB of gain (typical), 21% efficiency, and less than 2.5% EVM — all at >10 W of power.
