Freescale LDMOS transistor range
26 July, 2012Richardson has announced availability and design support for two new laterally diffused metal oxide semiconductor (LDMOS) transistors from Freescale.
Freescale Semiconductor AFT05MS031N/AFT09MS031N power transistor range
16 July, 2012Two laterally diffused metal oxide semiconductor power transistors targeting land mobile radio from Freescale Semiconductor, AFT05MS031N and AFT09MS031N, are designed to meet the next generation of voice, video and data services for first responders through the deployment of LTE networks, as well as the interoperability of P25.
Microsemi Corporation GaN on SiC high electron mobility transistors
30 June, 2012Full design support capabilities have been announced for a family of gallium nitride (GaN) on silicon carbide (SiC), high electron mobility transistor (HEMT), radiofrequency transistors from Microsemi Corporation.
Single atom transistor ahead of its time
17 April, 2012 by Mike SmythAn individual phosphorus atom is the active component that has been placed in a silicon crystal to create a single atom transistor.
Renesas μPA2812T1L MOSFETs
09 March, 2012Renesas has available its range of five low-loss, P-channel power MOSFET products, including the μPA2812T1L, optimised for use in charge control switches for lithium-ion secondary batteries of notebook PCs and power management switches for power supply switching with AC adapters.
Clarke & Severn Electronics GaN HEMT transsistors
14 March, 2011Cree has released GaN HEMT transistors for frequency-agile, software defined radios, 3G/4G telecom BTS, C-OFDM data-links and satcom applications.
Cree RF GaN HEMT transistors
14 March, 2011Cree RF has released GaN HEMT transistors for frequency-agile, software defined radios, 3G/4G telecom BTS, C-OFDM data-links and satcom applications.
Molybdenite transistor claimed as a ‘first’
23 February, 2011Working transistors made from flakes of molybdenite have been made in Switzerland.
International Rectifier PQFN power MOSFET family
23 November, 2010 byInternational Rectifier has introduced a family of 25 and 30 V devices featuring HEXFET MOSFET silicon in a new performance PQFN 3 x 3 package that delivers high density for DC-DC converters in telecom, netcom and high-end desktop and notebook computers.
International Rectifier AUIRS2191S/AUIRGP50B60PD1 motor vehicle drivers
23 November, 2010 byInternational Rectifier has introduced the AUIRS2191S 600 V driver IC and AUIRGP50B60PD1 600 V non-punch-through insulated gate bipolar transistor for use in DC-DC motor vehicle applications.
Stable patterned electrets for microsystem applications
14 October, 2010Imec and the Holst Centre have developed stable patterned electrets with feature sizes at least down to 20 µm. The technology consists of creating a charged profile in an SiO2/Si3N4 structure by exploiting the difference in energy between the charge traps in either layer and at their interface. Patterned electret layers can be used for a plurality of technical applications such as micromotors, sensors, actuators and energy scavengers.
International Rectifier -30 V power MOSFET family
23 September, 2010 byInternational Rectifier has released a family of -30 V devices featuring the company’s latest P-channel MOSFET silicon in an SO-8 package for battery charge and discharge switches and system/load switches used in DC applications.
International Rectifier -30 V device series
22 September, 2010International Rectifier has introduced a family of -30 V devices featuring the company’s latest P-channel MOSFET silicon in an SO-8 package for battery charge and discharge switches, and system/load switches used in DC applications.
International Rectifier AUIRF7648M2 and AUIRF7669L2 power MOSFETs
22 September, 2010International Rectifier has introduced two motor vehicle DirectFETR2 power MOSFETs optimised with low gate charge for switching applications including switch mode power supplies, class d audio systems, high intensity discharge lighting, and other power conversion applications.
Diodes SOT963 bipolar transistor, MOSFET and TVS device package
17 September, 2010 byDiodes has introduced bipolar transistor, MOSFET and TVS devices in the ultra-small SOT963 package, that are claimed to achieve the same or better performance than much larger packaged parts.
