InGaAs - keeping Moore’s Law alive
21 December, 2012The smallest InGaAs transistor ever built is providing a pathway that will allow the number of transistors on microchiops to continue to double every two years.
Mouser stocks NexFET MOSFETs
08 October, 2012NexFET power MOSFET technology improves energy efficiency in high-power computing.
International Rectifier automotive power MOSFETs
26 September, 2012The AUIRFR4292 and AUIRFS6535 automotive power MOSFETs are optimised for Piezo injection systems for petrol and diesel engines.
Eliminating loss in power transmission
27 August, 2012A team of researchers at RIKEN and the University of Tokyo has demonstrated a new material that promises to eliminate loss in electrical power transmission. The surprise is that their methodology for solving this classic energy problem is based on the first realisation of a highly exotic type of magnetic semiconductor first theorised less than a decade ago - a magnetic topological insulator.
Freescale LDMOS transistor range
26 July, 2012Richardson has announced availability and design support for two new laterally diffused metal oxide semiconductor (LDMOS) transistors from Freescale.
Freescale Semiconductor AFT05MS031N/AFT09MS031N power transistor range
16 July, 2012Two laterally diffused metal oxide semiconductor power transistors targeting land mobile radio from Freescale Semiconductor, AFT05MS031N and AFT09MS031N, are designed to meet the next generation of voice, video and data services for first responders through the deployment of LTE networks, as well as the interoperability of P25.
Microsemi Corporation GaN on SiC high electron mobility transistors
30 June, 2012Full design support capabilities have been announced for a family of gallium nitride (GaN) on silicon carbide (SiC), high electron mobility transistor (HEMT), radiofrequency transistors from Microsemi Corporation.
Single atom transistor ahead of its time
17 April, 2012 by Mike SmythAn individual phosphorus atom is the active component that has been placed in a silicon crystal to create a single atom transistor.
Renesas μPA2812T1L MOSFETs
09 March, 2012Renesas has available its range of five low-loss, P-channel power MOSFET products, including the μPA2812T1L, optimised for use in charge control switches for lithium-ion secondary batteries of notebook PCs and power management switches for power supply switching with AC adapters.
Clarke & Severn Electronics GaN HEMT transsistors
14 March, 2011Cree has released GaN HEMT transistors for frequency-agile, software defined radios, 3G/4G telecom BTS, C-OFDM data-links and satcom applications.
Cree RF GaN HEMT transistors
14 March, 2011Cree RF has released GaN HEMT transistors for frequency-agile, software defined radios, 3G/4G telecom BTS, C-OFDM data-links and satcom applications.
Molybdenite transistor claimed as a ‘first’
23 February, 2011Working transistors made from flakes of molybdenite have been made in Switzerland.
International Rectifier AUIRS2191S/AUIRGP50B60PD1 motor vehicle drivers
23 November, 2010 byInternational Rectifier has introduced the AUIRS2191S 600 V driver IC and AUIRGP50B60PD1 600 V non-punch-through insulated gate bipolar transistor for use in DC-DC motor vehicle applications.
International Rectifier PQFN power MOSFET family
23 November, 2010 byInternational Rectifier has introduced a family of 25 and 30 V devices featuring HEXFET MOSFET silicon in a new performance PQFN 3 x 3 package that delivers high density for DC-DC converters in telecom, netcom and high-end desktop and notebook computers.
Stable patterned electrets for microsystem applications
14 October, 2010Imec and the Holst Centre have developed stable patterned electrets with feature sizes at least down to 20 µm. The technology consists of creating a charged profile in an SiO2/Si3N4 structure by exploiting the difference in energy between the charge traps in either layer and at their interface. Patterned electret layers can be used for a plurality of technical applications such as micromotors, sensors, actuators and energy scavengers.
