Components > Transistors

Designing energy-efficient transistors

09 July, 2015

Researchers have discovered new material that could make it possible to pack more transistors on a chip.


SEMIKRON SKYPER Prime IGBT driver

29 May, 2015

SKYPER Prime is an IGBT driver for Semitrans 10 and PrimePACK modules. Apart from control and protection functions, the IGBT driver offers galvanically isolated voltage and temperature signals.


TriQuint/Qorvo TGF3015-SM input-matched transistor

20 May, 2015

The 10 W (P3 dB), 50 Ω input-matched TGF3015-SM is a discrete GaN on SiC HEMT that operates from 0.03 to 3 GHz. The integrated input-matching network enables wideband gain and power performance, while the output can be matched on board to optimise power and efficiency for any region within the band.


Liquid crystal for organic thin-film transistors

13 April, 2015

Researchers at Tokyo Institute of Technology and the Japan Science and Technology Agency have designed a smectic liquid crystal that overcomes many of the challenges posed by organic field effect transistor materials.


STMicroelectronics STGWT28IH125DF trench gate field-stop IGBT

23 March, 2015

STMicroelectronics' STGWT28IH125DF IGBTs are developed using a trench gate field-stop structure. Performance is optimised in both conduction and switching losses.


Ultrathin polymer insulators key to low-power soft electronics

16 March, 2015

Researchers at the Korea Advanced Institute of Science and Technology (KAIST) have developed a high-performance ultrathin polymeric insulator for field-effect transistors (FETs).


Toshiba DSOP Advance package MOSFETs

03 March, 2015

Toshiba Corporation's Semiconductor & Storage Products Company has launched a surface-mount package series as part of its line-up of low-voltage MOSFET products that use dual-sided cooling to improve heat dissipation.


Toshiba DSOP Advance package MOSFETs

03 March, 2015

Toshiba Corporation's Semiconductor & Storage Products Company has launched a surface-mount package series as part of its line-up of low-voltage MOSFET products that use dual-sided cooling to improve heat dissipation.


Better measurements of single molecule circuits

20 February, 2015

It is nearly 50 years since Gordon Moore predicted that the density of transistors on an integrated circuit would double every two years. Moore's Law has turned out to be a self-fulfilling prophecy that technologists pushed to meet, but to continue into the future, engineers will have to make radical changes to the structure or composition of circuits.


Extreme-temperature electronics

12 February, 2015 by Zhengzheng Zhang

Many industries are calling for electronics that can operate reliably in a harsh environment, including extreme temperatures above 200°C.


Diodes DFN0606 NPN and PNP transistors

19 December, 2014

Diodes has introduced the DFN0606-packaged NPN and PNP bipolar transistors. Occupying a board space of 0.36 mm2, the transistors are said to be 40% smaller than the DFN1006 (SOT883) parts and deliver the same or better electrical performance.


Central Semiconductor P-channel enhancement mode MOSFETs

18 December, 2014

Central Semiconductor P-channel enhancement mode MOSFETs offer low rDS(ON) and low-threshold voltage.


Vishay Intertechnology trench PT and FS IGBT platform

12 December, 2014

Vishay Intertechnology has introduced its trench IGBT (insulated-gate bipolar transistor) platform featuring punch-through (PT) and field-stop (FS) technologies.


TriQuint T1G4004532 and T1G4020036 RF GaN on SiC HEMTs

14 November, 2014

TriQuint has released its latest RF GaN on SiC power transistors. The HEMTs are suitable for military and civilian radar, professional and military radio communications, test instrumentation, wideband and narrowband amplifier and jammer applications.


World's thinnest electric generator

27 October, 2014

Researchers from Columbia Engineering and the Georgia Institute of Technology have made the first experimental observation of piezoelectricity and the piezotronic effect in an atomically thin material, molybdenum disulfide (MoS2), resulting in a unique electric generator and mechanosensation devices that are optically transparent, light, bendable and stretchable.


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