Vishay Intertechnology IGBT power modules for TIG welding machines
26 January, 2016Vishay Intertechnology has introduced four half-bridge and single-switch IGBT power modules designed specifically for TIG welding machines.
Next-generation high-speed transistors
19 January, 2016Researchers have developed a double-layered nanowire, consisting of a germanium core and a silicon shell. This is a major step towards the realisation of a next-generation high-speed transistor.
Vanadium oxide gives electronics a power boost
21 October, 2015 by Walt MillsTransistors have been given a power boost with a new technique that incorporates vanadium oxide — a function oxide — into electronic devices.
Squishy transistors
18 September, 2015Researchers have shown that a new device concept — a 'squishy' transistor — can overcome the predicted power bottleneck caused by CMOS (complementary metal-oxide-semiconductor) technology reaching its fundamental limits.
Black phosphorus-based transistors
31 July, 2015Researchers have created a high-performance transistor using black phosphorus (BP).
Designing energy-efficient transistors
09 July, 2015Researchers have discovered new material that could make it possible to pack more transistors on a chip.
SEMIKRON SKYPER Prime IGBT driver
29 May, 2015SKYPER Prime is an IGBT driver for Semitrans 10 and PrimePACK modules. Apart from control and protection functions, the IGBT driver offers galvanically isolated voltage and temperature signals.
TriQuint/Qorvo TGF3015-SM input-matched transistor
20 May, 2015The 10 W (P3 dB), 50 Ω input-matched TGF3015-SM is a discrete GaN on SiC HEMT that operates from 0.03 to 3 GHz. The integrated input-matching network enables wideband gain and power performance, while the output can be matched on board to optimise power and efficiency for any region within the band.
Liquid crystal for organic thin-film transistors
13 April, 2015Researchers at Tokyo Institute of Technology and the Japan Science and Technology Agency have designed a smectic liquid crystal that overcomes many of the challenges posed by organic field effect transistor materials.
STMicroelectronics STGWT28IH125DF trench gate field-stop IGBT
23 March, 2015STMicroelectronics' STGWT28IH125DF IGBTs are developed using a trench gate field-stop structure. Performance is optimised in both conduction and switching losses.
Ultrathin polymer insulators key to low-power soft electronics
16 March, 2015Researchers at the Korea Advanced Institute of Science and Technology (KAIST) have developed a high-performance ultrathin polymeric insulator for field-effect transistors (FETs).
Toshiba DSOP Advance package MOSFETs
03 March, 2015Toshiba Corporation's Semiconductor & Storage Products Company has launched a surface-mount package series as part of its line-up of low-voltage MOSFET products that use dual-sided cooling to improve heat dissipation.
Toshiba DSOP Advance package MOSFETs
03 March, 2015Toshiba Corporation's Semiconductor & Storage Products Company has launched a surface-mount package series as part of its line-up of low-voltage MOSFET products that use dual-sided cooling to improve heat dissipation.
Better measurements of single molecule circuits
20 February, 2015It is nearly 50 years since Gordon Moore predicted that the density of transistors on an integrated circuit would double every two years. Moore's Law has turned out to be a self-fulfilling prophecy that technologists pushed to meet, but to continue into the future, engineers will have to make radical changes to the structure or composition of circuits.
Extreme-temperature electronics
12 February, 2015 by Zhengzheng ZhangMany industries are calling for electronics that can operate reliably in a harsh environment, including extreme temperatures above 200°C.
