New transistor operates 8.5 times faster for AI applications
14 August, 2023Researchers have reportedly developed the world's fastest electric-double-layer transistor using a highly ion conductive ceramic thin film and a diamond thin film.
Toshiba 100V N-Channel Power MOSFET
20 July, 2023The Toshiba 100V N-Channel Power MOSFET features low On-resistance and an expanded safe operating area.
Oxide growth system for next-gen semiconductors
18 July, 2023Researchers have laid the groundwork for future high-performance alternatives to silicon in microelectronics.
Novel transistor paves the way for advanced neuromorphic computing
13 July, 2023Researchers have developed an ionic device that utilises redox reactions as a step towards using physical reservoir computing.
New source-gated transistors to create flexible displays
28 June, 2023A University of Surrey discovery has solved a problem that affects source-gated transistors, to bring low-cost, flexible displays one step closer.
Intel, CEA-Leti to develop thin 2D TMDs for future transistors
21 June, 2023Intel has partnered with French lab CEA-Leti to put two-dimensional transition-metal dichalcogenides on 300 mm wafers.
Toshiba TK055U60Z1 N-Channel power MOSFET
21 June, 2023Toshiba has expanded its range of N-channel power MOSFETs with the TK055U60Z1, suitable for data centres, switching power supplies and power conditioners for photovoltaic generators.
Unlocking photonic computing power with artificial 'life'
20 June, 2023 by Emily Velasco, CaltechResearchers at the California Institute of Technology have used optical hardware for cellular automata, to design smaller transistors that increase computing speed and power.
Using phosphorus semiconductors to boost transistor performance
16 March, 2023Researchers have found that ultrathin phosphorus semiconductors that become metallic when stacked can boost transistor performance.
Wolfspeed GaN MMIC Transistor
21 February, 2023The gallium nitride CGHV59350F GaN MMIC transistor from Wolfspeed is 350 W, 5.2–5.9 GHz, 50Ω input/output matched and designed with high gain and wide bandwidth capabilities.
Toshiba develops SiC MOSFET with embedded Schottky barrier diode
16 December, 2022Toshiba has developed a SiC MOSFET that arranges embedded Schottky barrier diodes in a check pattern to realise low on-resistance and high reliability.
Infineon General-Purpose MOSFETs for power conversion applications
23 November, 2022The Infineon General-Purpose MOSFETs are designed to deliver flexibility, value and adaptability for a variety of applications.
Researchers introduce ionic circuits that compute in water
07 October, 2022Researchers at Harvard have created an ionic circuit consisting of hundreds of ionic transistors that perform the core process of neural network computing.
Flexible material developed to enable tiny transistors
05 August, 2022The tiny, transparent and flexible material could be used as a novel dielectric (insulator) component in transistors, which would enable these devices to shrink in size.
STMicroelectronics STL320N4LF8 and STL325N4LF8AG MOSFETs
05 July, 2022Cutting both on-resistance and switching loss, while optimising body-diode properties, STMicroelectronics' 40 V MOSFETs are designed to save energy and enable low noise in circuits for power conversion, motor control and power distribution.
