Basics of MOSFETs Part 2
05 April, 2006 by Vrej Barkhordarian, International Rectifier, El Segundo, Ca.Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different from the design used in VLSI devices
Basics of MOSFETs Part 1
05 March, 2006 by Vrej Barkhordarian, International Rectifier, El Segundo, Ca.Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different from the design used in VLSI devices
Close look at power MOSFETs - Part 1
05 July, 2005 by Vrej Barkhordarian, International RectifierDiscrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are different from the design used in VLSI devices
TIG welder IGBTs
09 June, 2005Advanced Power Technology has released two IGBT products for TIG welding - APT200GN60J and APT200GN60JDQ4.
Crossbar latches take on transistors
10 May, 2005US scientists have made nano-scale devices they claim could one day replace current transistor technology. The tiny devices, 'crossbar latches', are made up of a combination of crossed-over platinum wires with steric acid molecules set at their junctions.
Computers from a single atom?
01 April, 2005What is claimed to be the world's first single-atom-thick fabric has been created by researchers at Manchester University, in Britain, and Chernogolovka, in Russia.
Radiation-hardened, logic-level MOSFETs
17 January, 2005International Rectifier has introduced radiation-hardened (RAD-Hard) logic-level gate drive MOSFETs designed to boost efficiency and performance in circuits that traditionally relied on bipolar transistors.
Power MOSFETs
07 September, 2004Siliconix has announced a family of TrenchFET power MOSFETs in a reverse-lead TO-252 DPAK package.
See-through transistors
10 August, 2004Engineers at Oregon State University have created what is claimed to be the world's first transparent transistor, a see-through electronics component that could open the door to many new products.
Power MOSFETs
19 April, 2004Siliconix has released a trio of 250 V n-channel TrenchFET power MOSFETs that are claimed to offer the lowest on-resistance available in the SO-8, PowerPAK SO-8, and D2PAK packages for this voltage rating.
Transistor lights the way
21 March, 2004Researchers at the University of Illinois at Urbana-Champaign have developed the world’s first light emitting transistor (LET).
DNA creates self-assembling nano transistor
17 March, 2004Proving it is possible to use biology to create electronics, scientists at the Technion-Israel Institute of Technology have harnessed the power of DNA to create a self-assembling nanoscale transistor, the building block of electronics.
MOSFET driver
15 March, 2004Maxim has introduced the MAX8552 single-phase MOSFET driver IC optimised to complement the MAX8524/MAX8525 CPU core-supply controllers.
Using DNA to create nano-transistor
18 December, 2003Proving it is possible to use biology to create electronics, scientists at the Technion-Israel Institute of Technology have harnessed the power of DNA to create a self-assembling nanoscale transistor, the building block of electronics.
Buck MOSFET chip
07 July, 2003International Rectifier has introduced the IRF7821 and IRF7832 synchronous buck converter chip set designed to increase battery life in notebook computers.
