Computers from a single atom?
01 April, 2005What is claimed to be the world's first single-atom-thick fabric has been created by researchers at Manchester University, in Britain, and Chernogolovka, in Russia.
Radiation-hardened, logic-level MOSFETs
17 January, 2005International Rectifier has introduced radiation-hardened (RAD-Hard) logic-level gate drive MOSFETs designed to boost efficiency and performance in circuits that traditionally relied on bipolar transistors.
Power MOSFETs
07 September, 2004Siliconix has announced a family of TrenchFET power MOSFETs in a reverse-lead TO-252 DPAK package.
See-through transistors
10 August, 2004Engineers at Oregon State University have created what is claimed to be the world's first transparent transistor, a see-through electronics component that could open the door to many new products.
Power MOSFETs
19 April, 2004Siliconix has released a trio of 250 V n-channel TrenchFET power MOSFETs that are claimed to offer the lowest on-resistance available in the SO-8, PowerPAK SO-8, and D2PAK packages for this voltage rating.
Transistor lights the way
21 March, 2004Researchers at the University of Illinois at Urbana-Champaign have developed the world’s first light emitting transistor (LET).
DNA creates self-assembling nano transistor
17 March, 2004Proving it is possible to use biology to create electronics, scientists at the Technion-Israel Institute of Technology have harnessed the power of DNA to create a self-assembling nanoscale transistor, the building block of electronics.
MOSFET driver
15 March, 2004Maxim has introduced the MAX8552 single-phase MOSFET driver IC optimised to complement the MAX8524/MAX8525 CPU core-supply controllers.
Using DNA to create nano-transistor
18 December, 2003Proving it is possible to use biology to create electronics, scientists at the Technion-Israel Institute of Technology have harnessed the power of DNA to create a self-assembling nanoscale transistor, the building block of electronics.
Buck MOSFET chip
07 July, 2003International Rectifier has introduced the IRF7821 and IRF7832 synchronous buck converter chip set designed to increase battery life in notebook computers.
Triple-Gate transistor from research to development
25 June, 2003Intel has announced details of its 'tri-gate' transistor design, stating that the tri-gate transistor is moving from research to the development phase.
VSX75 series DC/DC converter
13 May, 2003The VSX75 series of DC-DC converters is 75 W, compact, high-efficiency, high-density dual output devices with 36-75 V input 3.3 and 5.0 VDC outputs.
MOSFET for isolated DC-DC converters
13 May, 2003International Rectifier's IRF1312 HEXFET power MOSFET is rated at 80 V and can be used as both a primary- and a secondary-side MOSFET in an isolated DC-DC converter for netcom and datacom systems.
30 V Power MOSFET
18 March, 2003International Rectifier's IRLR7833 and IRLR7821 HEXFET power MOSFETs are designed using stripe-trench technology enabling a low on-resistance, or RDS(on), 30 V MOSFET in a D-Pak.
'Dirty little secret' threatens Moore's Law
05 March, 2003Today's state-of-the-art chips have transistors roughly a micrometre in overall length. But this very success has brought the chipmakers to the brink of a steep, new obstacle to further gains in performance
