New technology to pave way for cheap, transparent electronics
10 January, 2014 by Tom Abate, Stanford EngineeringEngineers from the University of Nebraska-Lincoln (UNL) and Stanford University have created thin-film organic transistors that could operate more than five times faster than previous examples of this experimental technology.
Low-power tunnelling transistor for high-performance devices
20 December, 2013Researchers from Pennsylvania State University (Penn State), the National Institute of Standards and Technology (NIST) and wafer company IQE have written a paper on recent developments in compound semiconductor device technologies for high-speed and low-voltage/low-power applications.
STMicroelectronics SD4933MR moisture-resistant DMOS transistor
26 November, 2013The STMicroelectronics SD4933MR is an N-channel field-effect RF power transistor intended for use in 50 V industrial, scientific and medical (ISM) applications up to 100 MHz. The diffused metal oxide semiconductor (DMOS) transistor benefits from environmentally designed packaging.
Transistor mimics brain synapse
04 November, 2013Materials scientists at the Harvard School of Engineering and Applied Sciences (SEAS) have now created a new type of transistor that mimics the behaviour of a synapse. The novel device simultaneously modulates the flow of information in a circuit and physically adapts to changing signals.
Semikron IGBT module SKiiPX
14 October, 2013The IGBT module SKiiPX is designed for extreme climatic conditions and allows condensation during operation. It meets the requirements specifically for wind turbines in a power range of 1-6 MW in a claimed outstanding way.
International Rectifier IGBTs
14 October, 2013International Rectifier’s 1200 V ultra-fast insulated-gate bipolar transistors (IGBTs) are optimised for industrial motor drive and UPS systems. The devices leverage IR's field stop trench ultra-thin wafer technology that delivers lower conduction and switching losses.
Next-gen, nanoscale transistors for integrated electronics
14 August, 2013The Nano3 cleanroom facility at the Qualcomm Institute in the US now houses a new electron beam writer. But what’s unique about this writer is its ability to write patterns on a large scale - with minimum feature size of less than 8 nanometres on wafers with diameters that can be as large as 8 inches.
Transistors from nanoscale insulators
03 July, 2013It is now possible - even routine - to place millions of transistors on a single silicon chip. But at the rate the technology is progressing, in 10 or 20 years, transistors won’t get any smaller.
Transistors for next-gen green electronics
28 June, 2013Researchers at UC Santa Barbara, in collaboration with the University of Notre Dame, have recently demonstrated the highest reported drive current on a transistor made of a monolayer of tungsten diselenide (WSe2), a 2-dimensional atomic crystal categorised as a transition metal dichalcogenide (TMD).
Piezotronic transistors convert motion to electronic signals
09 May, 2013Using bundles of vertical zinc oxide nanowires, researchers have fabricated arrays of piezotronic transistors capable of converting mechanical motion directly into electronic controlling signals. The arrays could help give robots a more adaptive sense of touch, provide better security in handwritten signatures and offer new ways for humans to interact with electronic devices.
A step towards optical transistors?
17 April, 2013As demand for computing and communication capacity surges, the global communication infrastructure struggles to keep pace, since the light signals transmitted through fibre-optic lines must still be processed electronically, creating a bottleneck in telecommunications networks.
Diamonds being used to develop next-gen transistors
15 April, 2013 by Mike Smyth, specialist technical writerDiamonds are not only the hardest material known, they are a good conductor of heat and, when suitably doped, become an excellent conductor of electricity. Laurens H Willems van Beveren, a senior postdoctoral research fellow in solid state physics at Melbourne University, is researching these and other properties of diamonds to perhaps develop the next generation of transistors.
High-performance, organic nanowire phototransistors open the way for optoelectronic device miniaturisation
02 April, 2013A research team from Ulsan National Institute of Science and Technology (UNIST), South Korea, has developed high-performance organic phototransistors (OPTs) based on single-crystalline, n-channel organic nanowires.
SmartKem launches ink evaluation kit for ‘flexible’ thin film transistors
11 February, 2013Technology transfer kit combines education and technical support to further advances in next-generation flexible displays for use in smartphones and tablets.
Researchers demonstrate record-setting p-type transistor
08 January, 2013A new design for a basic component of all computer chips boasts the highest ‘carry mobility’ yet measured.
