STMicroelectronics STripFET F7 MOSFETs
01 November, 2016STMicroelectronics has launched two 40 V automotive-qualified MOSFETs featuring STripFET F7 technology, which combines good switching performance and energy efficiency with low emitted noise and high immunity to false turn-on.
Ultralow power transistors scavenge energy from their environment
25 October, 2016Engineers at the University of Cambridge have created a new design for transistors that operate on scavenged energy from their environment.
Carbon nanotube transistors outperform silicon
06 September, 2016Carbon nanotube transistors have so far lagged far behind semiconductors in high-performance electronics. Now, for the first time, materials engineers have created carbon nanotube transistors that outperform state-of-the-art silicon transistors.
NXP Semiconductors MRF1K50H power transistor
26 August, 2016The NXP Semiconductors MRF1K50H power transistor delivers 1500 W CW at 50 V, along with ruggedness and thermal performance.
Electronics you can see through
22 August, 2016Researchers from KAUST have developed see-through transistors and other essential electronic components using inexpensive, readily available materials and a simple fabrication technique.
STMicroelectronics TO-220FP wide creepage power transistors
15 August, 2016STMicroelectronics has introduced a portfolio of TO-220 FullPAK (TO-220FP) wide creepage power transistors, including what is claimed to be the world's first 1500 V super-junction MOSFET.
SKYPER Prime O IGBT driver with optical interface
08 August, 2016The SKYPER Prime O is an IGBT driver with an optical interface, galvanically insulated temperature and DC link signals.
Silicene finally comes unstuck
04 August, 2016Researchers have used oxygen to to break the bond between silicene and the substrate on which it is grown, overcoming the key hurdle preventing the production of a material with potential to supercharge electronics.
SEMIKRON SKYPER 12 IGBT driver
03 August, 2016SEMIKRON's SKYPER 12 safely drives IGBT modules up to 400 A. With a footprint of 35 x 45 mm, the driver is suitable for compact inverter designs with small IGBT modules, like Mini Dual or SEMiX 5.
What happens inside an atomically thin transistor?
22 July, 2016Have you ever wondered what happens inside an atomically thin semiconductor? Well, wonder no more: a team of physicists at the University of Texas at Austin has, and they've written about it in the Proceedings of the National Academy of Sciences.
ST powers portable e-car charger
06 June, 2016Silicon-carbide power electronics from STMicroelectronics have enabled the creation of the ZapCharger Portable, claimed to be the world's smallest, smartest and safest electric-car charging station.
NXP Semiconductors MRF8VP13350NR3 LDMOS transistor
10 April, 2016The MRF8VP13350NR3 is a 350 W CW transistor designed for industrial, scientific and medical (ISM) applications in the 700–1300 MHz frequency range. Manufactured by NXP Semiconductors, it is capable of 350 W CW or pulse power in narrowband operation.
Panasonic PGA26E19BA and PGA26C09DV GaN power transistors
09 April, 2016The PGA26E19BA GaN surface-mount (SMD) power transistor is an enhancement-mode, normally off power switch with 600 V blocking voltage. The PGA26C09DV GaN power transistor also provides 600 V blocking voltage and prevents current collapse, but in a TO-220 package.
Toshiba TBD62064AFAG and TBD62308AFAG DMOS FET transistor arrays
05 April, 2016The TBD62064AFAG and TBD62308AFAG transistor arrays are packaged in SSOP24 surface-mount type packages. The products are equipped with four channels of 50 V/1.5 A rated output, suitable for driving constant voltage unipolar stepping motors.
Renesas G8H Series 8th-generation IGBTs
17 March, 2016Renesas Electronics has announced six products in the 8th-generation G8H Series of insulated gate bipolar transistors (IGBTs) that minimise conversion losses in power conditioners for solar power generation systems and reduce inverter applications in uninterruptible power supply (UPS) systems.