Transistors made of reduced graphene oxide
12 April, 2017Researchers have developed a technique for converting positively charged (p-type) reduced graphene oxide (rGO) into negatively charged (n-type) rGO, creating a layered material that can be used to develop rGO-based transistors for use in electronic devices.
STMicroelectronics MDmesh K5 900 V MOSFETs
17 March, 2017Power-supply designers can satisfy system demands for higher power and greater efficiency using MDmesh K5 super-junction MOSFETs from STMicroelectronics. A 900 V breakdown voltage assures extra safety margin in systems with high bus voltages.
Silicon nanowires improve transistor-based biosensors
10 March, 2017Korean researchers have improved the fabrication of transistor-based biosensors by adding silicon nanowires to their surface.
Toshiba DTMOS V Series MOSFETs
17 February, 2017The Toshiba 600 V/650 V super junction N-channel power DTMOS V Series MOSFETs have improved EMI performance for use in industrial and office equipment.
The transistor that's driven by heat
06 February, 2017Researchers have created a thermoelectric organic transistor — apparently the first in the world to be controlled by a heat signal rather than an electrical signal.
Toshiba U-MOS VIII-H Series TPH4R10ANL and TPH6R30ANL low-voltage N-channel power MOSFETs
20 January, 2017The Toshiba U-MOS VIII-H Series TPH4R10ANL and TPH6R30ANL low-voltage N-channel power MOSFETs have a low-voltage trench structure process to achieve low on-resistance and high-speed performance.
Stretchy transistors suitable for wearable electronics
12 January, 2017US researchers have created a stretchy transistor that can be elongated to twice its length with only minimal changes in its conductivity.
Making transistor circuits more robust in power electronics
09 December, 2016 by Reinhard Zimmermann, Product MarketingFast IGBTs and SiC FETs have one thing in common: they need optimal control and connections to provide years of reliable service under possibly harsh conditions, so false triggering must be avoided at all costs.
STMicroelectronics STripFET F7 MOSFETs
01 November, 2016STMicroelectronics has launched two 40 V automotive-qualified MOSFETs featuring STripFET F7 technology, which combines good switching performance and energy efficiency with low emitted noise and high immunity to false turn-on.
Ultralow power transistors scavenge energy from their environment
25 October, 2016Engineers at the University of Cambridge have created a new design for transistors that operate on scavenged energy from their environment.
Carbon nanotube transistors outperform silicon
06 September, 2016Carbon nanotube transistors have so far lagged far behind semiconductors in high-performance electronics. Now, for the first time, materials engineers have created carbon nanotube transistors that outperform state-of-the-art silicon transistors.
NXP Semiconductors MRF1K50H power transistor
26 August, 2016The NXP Semiconductors MRF1K50H power transistor delivers 1500 W CW at 50 V, along with ruggedness and thermal performance.
Electronics you can see through
22 August, 2016Researchers from KAUST have developed see-through transistors and other essential electronic components using inexpensive, readily available materials and a simple fabrication technique.
STMicroelectronics TO-220FP wide creepage power transistors
15 August, 2016STMicroelectronics has introduced a portfolio of TO-220 FullPAK (TO-220FP) wide creepage power transistors, including what is claimed to be the world's first 1500 V super-junction MOSFET.
SKYPER Prime O IGBT driver with optical interface
08 August, 2016The SKYPER Prime O is an IGBT driver with an optical interface, galvanically insulated temperature and DC link signals.
