NXP Semiconductors AFT31150N LDMOS transistor
06 March, 2018The AFT31150N is a 150 W peak power LDMOS transistor from NXP Semiconductors. It is designed for applications operating at frequencies between 2700 and 3100 MHz and is particularly suitable for use in pulse applications.
NXP Semiconductors MRF13750H/MRF13750HS RF power LDMOS transistor
16 January, 2018The MRF13750H/MRF13750HS is an RF power LDMOS transistor from NXP Semiconductors. The 750 W continuous wave transistor is designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range and is capable of CW or pulse power in narrowband operations.
High-efficiency SiC power device developed
27 September, 2017Mitsubishi Electric has developed a silicon carbide (SiC) power device with what is claimed to be the world's highest power efficiency in a device of its type, thanks to the use of a proprietary source structure.
NXP MRFX1K80H high-power RF transistor
19 September, 2017The MRFX1K80H is a 65 V, wideband RF power LDMOS transistor from NXP Semiconductors. It is designed to deliver 1800 W CW at 65 V for applications from 1.8 to 400 MHz and capable of handling 65:1 VSWR.
Manipulating graphene for transistor applications
01 September, 2017US scientists have come one step closer to manipulating the electronic structure of graphene, which may enable the fabrication of graphene transistors that would be faster and more reliable than existing silicon-based transistors.
Power Integrations SID1183K single-channel IGBT/MOSFET gate driver
18 August, 2017Power Integrations' SID1183K is a single-channel IGBT and MOSFET gate driver in an eSOP package with 9.5 mm creepage and clearance distances. Galvanic isolation is provided by the company's innovative solid insulator FluxLink technology.
Logic circuits equipped with diamond-based transistors
08 August, 2017Japanese researchers have succeeded in developing logic circuits equipped with diamond-based MOSFETs at two different operation modes.
Transistors created from metal nanoparticles
28 July, 2017Researchers from the University of Hamburg have developed transistors based on metal nanoparticles, in a production method based on a completely different principle to current techniques.
A new spin on transistors
15 June, 2017A US engineer has designed a novel computing system, made entirely from carbon, which may one day replace the silicon transistors that power today's electronic devices.
STMicroelectronics STLD200N4F6AG and STLD125N4F6AG automotive power MOSFETs
26 May, 2017STMicroelectronics has introduced MOSFET devices in the PowerFLAT 5x6 dual-side cooling (DSC) package, enabling increased power density in automotive electronic control units (ECUs).
STMicroelectronics MDmesh DK5 power MOSFETs with fast-recovery diode
24 May, 2017The latest MDmesh DK5 power MOSFETs, from STMicroelectronics, are very high voltage (VHV) super-junction transistors with the extra advantage of a fast-recovery diode.
Vincotech VINco E3 power IGBTs
26 April, 2017The Vincotech VINco E3 power IGBTs are designed for motion control, solar and UPS applications.
Transistors made of reduced graphene oxide
12 April, 2017Researchers have developed a technique for converting positively charged (p-type) reduced graphene oxide (rGO) into negatively charged (n-type) rGO, creating a layered material that can be used to develop rGO-based transistors for use in electronic devices.
STMicroelectronics MDmesh K5 900 V MOSFETs
17 March, 2017Power-supply designers can satisfy system demands for higher power and greater efficiency using MDmesh K5 super-junction MOSFETs from STMicroelectronics. A 900 V breakdown voltage assures extra safety margin in systems with high bus voltages.
Silicon nanowires improve transistor-based biosensors
10 March, 2017Korean researchers have improved the fabrication of transistor-based biosensors by adding silicon nanowires to their surface.
