Renesas G8H Series 8th-generation IGBTs
17 March, 2016Renesas Electronics has announced six products in the 8th-generation G8H Series of insulated gate bipolar transistors (IGBTs) that minimise conversion losses in power conditioners for solar power generation systems and reduce inverter applications in uninterruptible power supply (UPS) systems.
Texas Instruments bq76200 N-channel FET driver
04 March, 2016The bq76200 is a low-power, high-side, N-channel FET driver. High-side protection avoids ground disconnection in the system and also allows continuous communication between the battery pack and host system.
New 2D semiconducting material could lead to faster electronics
16 February, 2016A new kind of 2D semiconducting material for electronics could lead to faster computers and smartphones that also consume less power.
New transistor could revolutionise thin-film electronics
11 February, 2016A new transistor could open the door to the development of flexible electronic devices in areas such as biomedical imaging and renewable energy.
Electrons, liquid helium and zero-resistance phenomenon
02 February, 2016 by Olga GarnovaThe end of Moore’s Law — the prediction that transistor density would double every two years — was one of the hottest topics in electronics-related discussions in 2015.
Toshiba TKR74F04PB power MOSFET
01 February, 2016Toshiba has launched a 40 V N-ch power MOSFET for automobile applications, including DC-DC converters, high-capacity motor drivers for electric power steering (EPS) and semiconductor relays.
Vishay Intertechnology IGBT power modules for TIG welding machines
26 January, 2016Vishay Intertechnology has introduced four half-bridge and single-switch IGBT power modules designed specifically for TIG welding machines.
Next-generation high-speed transistors
19 January, 2016Researchers have developed a double-layered nanowire, consisting of a germanium core and a silicon shell. This is a major step towards the realisation of a next-generation high-speed transistor.
Vanadium oxide gives electronics a power boost
21 October, 2015 by Walt MillsTransistors have been given a power boost with a new technique that incorporates vanadium oxide — a function oxide — into electronic devices.
Squishy transistors
18 September, 2015Researchers have shown that a new device concept — a 'squishy' transistor — can overcome the predicted power bottleneck caused by CMOS (complementary metal-oxide-semiconductor) technology reaching its fundamental limits.
Black phosphorus-based transistors
31 July, 2015Researchers have created a high-performance transistor using black phosphorus (BP).
Designing energy-efficient transistors
09 July, 2015Researchers have discovered new material that could make it possible to pack more transistors on a chip.
SEMIKRON SKYPER Prime IGBT driver
29 May, 2015SKYPER Prime is an IGBT driver for Semitrans 10 and PrimePACK modules. Apart from control and protection functions, the IGBT driver offers galvanically isolated voltage and temperature signals.
TriQuint/Qorvo TGF3015-SM input-matched transistor
20 May, 2015The 10 W (P3 dB), 50 Ω input-matched TGF3015-SM is a discrete GaN on SiC HEMT that operates from 0.03 to 3 GHz. The integrated input-matching network enables wideband gain and power performance, while the output can be matched on board to optimise power and efficiency for any region within the band.
Liquid crystal for organic thin-film transistors
13 April, 2015Researchers at Tokyo Institute of Technology and the Japan Science and Technology Agency have designed a smectic liquid crystal that overcomes many of the challenges posed by organic field effect transistor materials.
