ST powers portable e-car charger
06 June, 2016Silicon-carbide power electronics from STMicroelectronics have enabled the creation of the ZapCharger Portable, claimed to be the world's smallest, smartest and safest electric-car charging station.
NXP Semiconductors MRF8VP13350NR3 LDMOS transistor
10 April, 2016The MRF8VP13350NR3 is a 350 W CW transistor designed for industrial, scientific and medical (ISM) applications in the 700–1300 MHz frequency range. Manufactured by NXP Semiconductors, it is capable of 350 W CW or pulse power in narrowband operation.
Panasonic PGA26E19BA and PGA26C09DV GaN power transistors
09 April, 2016The PGA26E19BA GaN surface-mount (SMD) power transistor is an enhancement-mode, normally off power switch with 600 V blocking voltage. The PGA26C09DV GaN power transistor also provides 600 V blocking voltage and prevents current collapse, but in a TO-220 package.
Toshiba TBD62064AFAG and TBD62308AFAG DMOS FET transistor arrays
05 April, 2016The TBD62064AFAG and TBD62308AFAG transistor arrays are packaged in SSOP24 surface-mount type packages. The products are equipped with four channels of 50 V/1.5 A rated output, suitable for driving constant voltage unipolar stepping motors.
Renesas G8H Series 8th-generation IGBTs
17 March, 2016Renesas Electronics has announced six products in the 8th-generation G8H Series of insulated gate bipolar transistors (IGBTs) that minimise conversion losses in power conditioners for solar power generation systems and reduce inverter applications in uninterruptible power supply (UPS) systems.
Texas Instruments bq76200 N-channel FET driver
04 March, 2016The bq76200 is a low-power, high-side, N-channel FET driver. High-side protection avoids ground disconnection in the system and also allows continuous communication between the battery pack and host system.
New 2D semiconducting material could lead to faster electronics
16 February, 2016A new kind of 2D semiconducting material for electronics could lead to faster computers and smartphones that also consume less power.
New transistor could revolutionise thin-film electronics
11 February, 2016A new transistor could open the door to the development of flexible electronic devices in areas such as biomedical imaging and renewable energy.
Electrons, liquid helium and zero-resistance phenomenon
02 February, 2016 by Olga GarnovaThe end of Moore’s Law — the prediction that transistor density would double every two years — was one of the hottest topics in electronics-related discussions in 2015.
Toshiba TKR74F04PB power MOSFET
01 February, 2016Toshiba has launched a 40 V N-ch power MOSFET for automobile applications, including DC-DC converters, high-capacity motor drivers for electric power steering (EPS) and semiconductor relays.
Vishay Intertechnology IGBT power modules for TIG welding machines
26 January, 2016Vishay Intertechnology has introduced four half-bridge and single-switch IGBT power modules designed specifically for TIG welding machines.
Next-generation high-speed transistors
19 January, 2016Researchers have developed a double-layered nanowire, consisting of a germanium core and a silicon shell. This is a major step towards the realisation of a next-generation high-speed transistor.
Vanadium oxide gives electronics a power boost
21 October, 2015 by Walt MillsTransistors have been given a power boost with a new technique that incorporates vanadium oxide — a function oxide — into electronic devices.
Squishy transistors
18 September, 2015Researchers have shown that a new device concept — a 'squishy' transistor — can overcome the predicted power bottleneck caused by CMOS (complementary metal-oxide-semiconductor) technology reaching its fundamental limits.
Black phosphorus-based transistors
31 July, 2015Researchers have created a high-performance transistor using black phosphorus (BP).
