US scientists have made nano-scale devices they claim could one day replace current transistor technology. The tiny devices, 'crossbar latches', are made up of a combination of crossed-over platinum wires with steric acid molecules set at their junctions.
IBM, the Sony Group and Toshiba have disclosed in detail the multi-core architectural design - featuring supercomputer-like floating point performance with observed clock speeds greater than 4 GHz.
While enormous machines gouge out 7 m wide tunnels from the hard rock beneath Martin Ams' feet as part of the Epping to Chatswood Rail Line, the Macquarie University PhD student focuses on making tunnels just five microns wide
The global market for portable communication products such as pagers, two-way radios, cordless phones, mobile phones, personal GPS receivers, wireless internet browsers and portable video phones is growing at a rapid pace
What is claimed to be the world's first single-atom-thick fabric has been created by researchers at Manchester University, in Britain, and Chernogolovka, in Russia.
The Centre for Integrated Photonics in Ipswich, England has launched a range of electro-absorption modulators fabricated using indium-phosphide.
Kontron's newest and most innovative product sets the standard of the next generation of Embedded Technology. Known as ECM (Embedded Computer Module), it houses control boards within a secure module for use by OEMs and Integrators as a technology building block for a wide variety of application-specific systems.
Researchers with the US Department of Energy's Lawrence Berkeley National Laboratory (Berkely Lab) and the University of California at Berkeley have shown that for nanocrystals, the doping process in which one type of positively charged atom, or cation, is exchanged for another, takes place at a much faster rate than for crystals of extended size and is fully reversible, something that is virtually forbidden in micro-sized crystals under the same environmental conditions.
International Rectifier has introduced radiation-hardened (RAD-Hard) logic-level gate drive MOSFETs designed to boost efficiency and performance in circuits that traditionally relied on bipolar transistors.