As conventional silicon-based MOSFETs mature, they are now reaching their theoretical limits of performance.
The design is said to reduce the amount of heat generated by the devices during operations by 40%, leading to simplification of the cooling system.
Researchers have produced a two-dimensional hexagonal boron nitride ink, which has been used to fabricate flexible thin-film transistors.
The milestone is said to eclipse the performance — and efficiency — of the traditional RF-CMOS technology that is ubiquitous in modern consumer electronics, including mobile phones.
The C3M0016120D, C3M0021120D and C3M0032120D devices include a rugged intrinsic body diode that allows for third-quadrant operation without the need for an additional external diode.
Dutch physicists have constructed a two-dimensional spin transistor, in which spin currents were generated by an electric current through graphene.
Researchers have made a breakthrough in the development of transistors based on gallium oxide, achieving high breakdown voltage combined with high current conductivity.
The Generation 7 IGBTs, from Semikron, are said to represent the latest in IGBT chip technology. They are specifically designed to match the requirements of motor drive applications.
Seeking to further increase the conversion efficiency of silicon-based components in power electronics, researchers developed a power switching device that surpasses previous performance limits.
UnitedSiC has released a family of high-performance FET transistors based on a cascode configuration, made with the use of SiC technology.
German physicists have developed an organic transistor that functions perfectly under both low and high currents.
The unipolar n-type transistor has a high electron mobility performance of up to 7.16 cm2 V−1 s−1, heralding an exciting future for organic electronics.
Researchers have engineered a zinc-oxide-based transparent material that displays tuneable electronic properties depending on the tweaking of a new type of dopant.
STMicroelectronics' MDmesh DM6 600 V MOSFETs contain a fast-recovery body diode to bring the performance advantages of the company's super-junction technology to full- and half-bridge topologies, zero-voltage switching (ZVS) phase-shift converters, and applications and topologies that need a robust diode to handle dynamic dV/dt.
STMicroelectronics' MDmesh M6 series 600 V super-junction transistors are engineered for high efficiency in medium-power resonant and hard-switching converter topologies.