Components > Transistors

SiC-based MOSFETs offer benefits in automotive, power applications

08 January, 2020 by Jeffrey Fedison, PhD, Sr Applications Engineer, STMicroelectronics

As conventional silicon-based MOSFETs mature, they are now reaching their theoretical limits of performance.

Diamond film boosts heat dissipation efficiency of GaN HEMTs

18 December, 2019

The design is said to reduce the amount of heat generated by the devices during operations by 40%, leading to simplification of the cooling system.

2D dielectric inks for print-in-place electronics

17 December, 2019

Researchers have produced a two-dimensional hexagonal boron nitride ink, which has been used to fabricate flexible thin-film transistors.

Carbon nanotube tech exceeds 100 GHz in RF applications

05 December, 2019

The milestone is said to eclipse the performance — and efficiency — of the traditional RF-CMOS technology that is ubiquitous in modern consumer electronics, including mobile phones.

Wolfspeed C3M silicon carbide power MOSFETs

23 October, 2019

The C3M0016120D, C3M0021120D and C3M0032120D devices include a rugged intrinsic body diode that allows for third-quadrant operation without the need for an additional external diode.

Fully electronic 2D spin transistors created

30 September, 2019

Dutch physicists have constructed a two-dimensional spin transistor, in which spin currents were generated by an electric current through graphene.

Gallium oxide power transistors said to achieve record values

05 September, 2019

Researchers have made a breakthrough in the development of transistors based on gallium oxide, achieving high breakdown voltage combined with high current conductivity.

Semikron Generation 7 IGBTs for motor drives

25 June, 2019

The Generation 7 IGBTs, from Semikron, are said to represent the latest in IGBT chip technology. They are specifically designed to match the requirements of motor drive applications.

Switched on to silicon-based electronics

18 June, 2019

Seeking to further increase the conversion efficiency of silicon-based components in power electronics, researchers developed a power switching device that surpasses previous performance limits.

UnitedSiC high-performance SiC FET switching transistors

01 June, 2019

UnitedSiC has released a family of high-performance FET transistors based on a cascode configuration, made with the use of SiC technology.

An organic transistor for all purposes

29 March, 2019

German physicists have developed an organic transistor that functions perfectly under both low and high currents.

High-performance n-type transistor developed

12 March, 2019

The unipolar n-type transistor has a high electron mobility performance of up to 7.16 cm2 V−1 s−1, heralding an exciting future for organic electronics.

Transparent transistors developed

07 February, 2019

Researchers have engineered a zinc-oxide-based transparent material that displays tuneable electronic properties depending on the tweaking of a new type of dopant.

STMicroelectronics MDmesh DM6 600 V MOSFETs

31 January, 2019

STMicroelectronics' MDmesh DM6 600 V MOSFETs contain a fast-recovery body diode to bring the performance advantages of the company's super-junction technology to full- and half-bridge topologies, zero-voltage switching (ZVS) phase-shift converters, and applications and topologies that need a robust diode to handle dynamic dV/dt.

STMicroelectronics MDmesh M6 series super-junction transistors

21 December, 2018

STMicroelectronics' MDmesh M6 series 600 V super-junction transistors are engineered for high efficiency in medium-power resonant and hard-switching converter topologies.

  • All content Copyright © 2020 Westwick-Farrow Pty Ltd