The Generation 7 IGBTs, from Semikron, are said to represent the latest in IGBT chip technology. They are specifically designed to match the requirements of motor drive applications.
Seeking to further increase the conversion efficiency of silicon-based components in power electronics, researchers developed a power switching device that surpasses previous performance limits.
UnitedSiC has released a family of high-performance FET transistors based on a cascode configuration, made with the use of SiC technology.
German physicists have developed an organic transistor that functions perfectly under both low and high currents.
The unipolar n-type transistor has a high electron mobility performance of up to 7.16 cm2 V−1 s−1, heralding an exciting future for organic electronics.
Researchers have engineered a zinc-oxide-based transparent material that displays tuneable electronic properties depending on the tweaking of a new type of dopant.
STMicroelectronics' MDmesh DM6 600 V MOSFETs contain a fast-recovery body diode to bring the performance advantages of the company's super-junction technology to full- and half-bridge topologies, zero-voltage switching (ZVS) phase-shift converters, and applications and topologies that need a robust diode to handle dynamic dV/dt.
STMicroelectronics' MDmesh M6 series 600 V super-junction transistors are engineered for high efficiency in medium-power resonant and hard-switching converter topologies.
Researchers have announced a major advancement towards the creation of a topological transistor, which would burn much less energy than conventional electronics.
The ISL78424 and ISL78444 MOSFET drivers feature single, tri-level PWM input for controlling both gate drivers, and the ISL78434 has dual independent inputs that separately control the high-side and low-side drivers.
A diamond-based ultrathin transistor has the ability to outperform and be more durable than current devices deployed in high-radiation environments such as rocket engines.
Fujitsu and Fujitsu Laboratories have developed a crystal structure that increases both current and voltage in gallium-nitride (GaN) high-electron-mobility transistors.
US researchers have made one giant leap towards quantum computing with their demonstration of the first single-photon transistor using a semiconductor chip.
The QPD1025L gallium nitride (GaN) on silicon carbide (SiC) transistor, from Qorvo, operates with 1.8 kW at 65 V. It is claimed to be the industry's highest-power GaN-on-SiC radiofrequency transistor, delivering the high signal integrity and extended reach essential for L-band avionics and identification friend or foe (IFF) applications.
The AFT31150N is a 150 W peak power LDMOS transistor from NXP Semiconductors. It is designed for applications operating at frequencies between 2700 and 3100 MHz and is particularly suitable for use in pulse applications.