Components > Transistors

Semikron Generation 7 IGBTs for motor drives

25 June, 2019

The Generation 7 IGBTs, from Semikron, are said to represent the latest in IGBT chip technology. They are specifically designed to match the requirements of motor drive applications.

Switched on to silicon-based electronics

18 June, 2019

Seeking to further increase the conversion efficiency of silicon-based components in power electronics, researchers developed a power switching device that surpasses previous performance limits.

UnitedSiC high-performance SiC FET switching transistors

01 June, 2019

UnitedSiC has released a family of high-performance FET transistors based on a cascode configuration, made with the use of SiC technology.

An organic transistor for all purposes

29 March, 2019

German physicists have developed an organic transistor that functions perfectly under both low and high currents.

High-performance n-type transistor developed

12 March, 2019

The unipolar n-type transistor has a high electron mobility performance of up to 7.16 cm2 V−1 s−1, heralding an exciting future for organic electronics.

Transparent transistors developed

07 February, 2019

Researchers have engineered a zinc-oxide-based transparent material that displays tuneable electronic properties depending on the tweaking of a new type of dopant.

STMicroelectronics MDmesh DM6 600 V MOSFETs

31 January, 2019

STMicroelectronics' MDmesh DM6 600 V MOSFETs contain a fast-recovery body diode to bring the performance advantages of the company's super-junction technology to full- and half-bridge topologies, zero-voltage switching (ZVS) phase-shift converters, and applications and topologies that need a robust diode to handle dynamic dV/dt.

STMicroelectronics MDmesh M6 series super-junction transistors

21 December, 2018

STMicroelectronics' MDmesh M6 series 600 V super-junction transistors are engineered for high efficiency in medium-power resonant and hard-switching converter topologies.

Topological transistors could enable ultralow-energy electronics

14 December, 2018

Researchers have announced a major advancement towards the creation of a topological transistor, which would burn much less energy than conventional electronics.

Renesas ISL784x4 family of MOSFET drivers

20 November, 2018

The ISL78424 and ISL78444 MOSFET drivers feature single, tri-level PWM input for controlling both gate drivers, and the ISL78434 has dual independent inputs that separately control the high-side and low-side drivers.

Tiny diamond transistors could be used in spacecraft

06 November, 2018

A diamond-based ultrathin transistor has the ability to outperform and be more durable than current devices deployed in high-radiation environments such as rocket engines.

Fujitsu triples the output power of GaN transistors

27 August, 2018

Fujitsu and Fujitsu Laboratories have developed a crystal structure that increases both current and voltage in gallium-nitride (GaN) high-electron-mobility transistors.

Quantum transistor made from a semiconductor

13 July, 2018

US researchers have made one giant leap towards quantum computing with their demonstration of the first single-photon transistor using a semiconductor chip.

Qorvo QPD1025L GaN-on-SiC transistor

06 June, 2018

The QPD1025L gallium nitride (GaN) on silicon carbide (SiC) transistor, from Qorvo, operates with 1.8 kW at 65 V. It is claimed to be the industry's highest-power GaN-on-SiC radiofrequency transistor, delivering the high signal integrity and extended reach essential for L-band avionics and identification friend or foe (IFF) applications.

NXP Semiconductors AFT31150N LDMOS transistor

06 March, 2018

The AFT31150N is a 150 W peak power LDMOS transistor from NXP Semiconductors. It is designed for applications operating at frequencies between 2700 and 3100 MHz and is particularly suitable for use in pulse applications.

  • All content Copyright © 2019 Westwick-Farrow Pty Ltd